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Datasheets for =EP

Datasheets found :: 2418
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No. Part Name Description Manufacturer
61 2N6109 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
62 2N6109 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. General Electric Solid State
63 2N6110 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
64 2N6110 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. General Electric Solid State
65 2N6111 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
66 2N6111 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. General Electric Solid State
67 2N6121 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. General Electric Solid State
68 2N6121 Epitaxial-base transistor for linear and switching applications SGS-ATES
69 2N6122 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
70 2N6122 Epitaxial-base transistor for linear and switching applications SGS-ATES
71 2N6123 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
72 2N6123 Epitaxial-base transistor for linear and switching applications SGS-ATES
73 2N6124 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. General Electric Solid State
74 2N6124 Epitaxial-base transistor for linear and switching applications SGS-ATES
75 2N6125 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. General Electric Solid State
76 2N6125 Epitaxial-base transistor for linear and switching applications SGS-ATES
77 2N6126 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. General Electric Solid State
78 2N6126 Epitaxial-base transistor for linear and switching applications SGS-ATES
79 2N6246 Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. General Electric Solid State
80 2N6247 Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. General Electric Solid State
81 2N6248 Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. General Electric Solid State
82 2N6288 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
83 2N6288 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
84 2N6289 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
85 2N6289 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
86 2N6290 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
87 2N6290 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
88 2N6291 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
89 2N6291 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
90 2N6292 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation


Datasheets found :: 2418
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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