| No. |
Part Name |
Description |
Manufacturer |
| 1 |
01BZA8 |
DIODES (DIODES FOR PROTECTING AGAINST ESD) |
TOSHIBA |
| 2 |
01BZA8.2 |
Diodes for Protecting Against ESD |
TOSHIBA |
| 3 |
01ZA8 |
DIODES( DIODES FOR PROTECTING AGAINST ESD) |
TOSHIBA |
| 4 |
01ZA8.2 |
Diodes for Protecting Against ESD |
TOSHIBA |
| 5 |
01ZAB8.2 |
DIODES( DIODES FOR PROTECTING AGAINST ESD) |
TOSHIBA |
| 6 |
1550A |
Strain Indicator Calibrator |
Vishay |
| 7 |
1B31 |
Wide Bandwidth Strain Gage Signal Conditioner |
Analog Devices |
| 8 |
1B31AN |
Wide Bandwidth Strain Gage Signal Conditioner |
Analog Devices |
| 9 |
1B31SD |
Wide Bandwidth Strain Gage Signal Conditioner |
Analog Devices |
| 10 |
1N3063 |
Extremely fast glass passivated silicon switching diode, marking plain text or color rings yellow-orange-black-green |
Texas Instruments |
| 11 |
1N3604 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-brown or plain text |
Texas Instruments |
| 12 |
1N3606 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-orange or plain text |
Texas Instruments |
| 13 |
1N4009 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-yellow or plain text |
Texas Instruments |
| 14 |
1N4151 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-brown or plain text |
Texas Instruments |
| 15 |
1N4153 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-orange or plain text |
Texas Instruments |
| 16 |
1N4154 |
Extremely fast, glass-passivated silicon diode for fast switching applications, marking color ring yellow-brown-green-yellow or plain text |
Texas Instruments |
| 17 |
1N4305 |
Extremely fast glass passivated silicon switching diode, marking plain text or color rings yellow-orange-black-green |
Texas Instruments |
| 18 |
1N459 |
Glass passivated silicon switching diode with high breaking voltage, marking using plain text or color rings yellow-green-white |
Texas Instruments |
| 19 |
20L08 |
2.0GHz 0.8W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 20 |
20L15 |
2.0GHz 1.5W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 21 |
2100 |
2.0GHz 0.316W 20V NPN silicon RF transistor designed for high gain linear performance |
SGS Thomson Microelectronics |
| 22 |
2120B |
Strain Gage Signal Conditioner/Amplifier |
Vishay |
| 23 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 24 |
2B30 |
High Performance, Economy Strain Gage/RTD Conditioners |
Intronics |
| 25 |
2B31 |
High Performance, Economy Strain Gage/RTD Conditioners |
Intronics |
| 26 |
2B34 |
Four Channel RTD/Strain Gage Conditioner |
Intronics |
| 27 |
2N1185 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 28 |
2N1186 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 29 |
2N1187 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
| 30 |
2N1188 |
PNP germanium transistor for high-gain audio amplifier and switching applications |
Motorola |
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