No. |
Part Name |
Description |
Manufacturer |
61 |
2N324 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
62 |
2N3279 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
63 |
2N3280 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
64 |
2N3281 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
65 |
2N3282 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
66 |
2N3810DCSM |
DUAL HIGH GAIN PNP TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
67 |
2N3962 |
High-Gain Low Noise PNP Transistor |
CCSIT-CE |
68 |
2N3962 |
Silicon PNP low power transistor with high gain at low level |
ICCE |
69 |
2N3963 |
High-Gain Low Noise PNP Transistor |
CCSIT-CE |
70 |
2N3963 |
Silicon PNP low power transistor with high gain at low level |
ICCE |
71 |
2N3964 |
High-Gain Low Noise PNP Transistor |
CCSIT-CE |
72 |
2N3964 |
Silicon PNP low power transistor with high gain at low level |
ICCE |
73 |
2N4416 |
Wideband, High Gain, Single, N- Channel JFET |
Linear Systems |
74 |
2N4416A |
Wideband, High Gain, Single, N- Channel JFET |
Linear Systems |
75 |
2N508 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
76 |
2N5155 |
PNP Germanium power transistor, collector-emitter sustaining voltage capability |
Motorola |
77 |
2N5564 |
Matched High Gain |
Vishay |
78 |
2N5565 |
Matched High Gain |
Vishay |
79 |
2N5566 |
Matched High Gain |
Vishay |
80 |
2N5911 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
81 |
2N5911 |
Matched High Gain |
Vishay |
82 |
2N5912 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
83 |
2N5912 |
Matched High Gain |
Vishay |
84 |
2N5912C |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
85 |
2N5916 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
86 |
2N5916 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
87 |
2N5917 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
88 |
2N5917 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
89 |
2N5918 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
90 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
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