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Datasheets for AIN

Datasheets found :: 15948
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No. Part Name Description Manufacturer
121 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
122 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
123 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
124 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
125 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
126 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
127 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
128 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
129 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
130 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
131 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
132 2N7002 N-channel transistor. Drain-sourse voltage 60 V. Comchip Technology
133 2N998 Darlington amplifier containing two NPN silicon anular transistors Motorola
134 2N999 Darlington amplifier containing two NPN silicon anular transistors Motorola
135 2SA1349 TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS. RECOMMENDED FOR CASCADE/ CURRENT MIRROR CIRCUIT APPLICATIONS OF THE FIRST STAGES OF PRE/ MAIN AMPL TOSHIBA
136 2SA1612 AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR NEC
137 2SA811 Audio frequency high gain amplifier PNP silicon epitaxial transistor NEC
138 2SA811A AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD NEC
139 2SB1316TL PNP High gain amplifier Transistor(Darlington) ROHM
140 2SB1639 High-current gain Power Transistor (-60V/ -3A) ROHM
141 2SB852KT146B PNP High gain amplifier Transistor(Darlington) ROHM
142 2SC1545 High Gain Amp. & Switching Epitaxial Planar NPN Silicon Darlington Transistors ROHM
143 2SC1622 AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD NEC
144 2SC1622A AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD NEC
145 2SC1622A-L Low-frequency high-gain amplification silicon Tr. NEC
146 2SC1622A-T1B Low-frequency high-gain amplification silicon Tr. NEC
147 2SC1622A-T2B Low-frequency high-gain amplification silicon Tr. NEC
148 2SC2233 NPN silicon plastic power transistor. Designed for use in B/W TV horizontal deflection output. Vcbo =200V, DC current gain: 20 @ Ic = 4A. Pd = 40W. USHA India LTD
149 2SC2298 HIGH GAIN AMPLIFIER Hitachi Semiconductor
150 2SC2352 Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note NEC


Datasheets found :: 15948
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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