| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
| 2 |
1511-8 |
Gold metallized silicon NPN power transistor designed for CW and pulsed radar applications 400-450MHz |
SGS Thomson Microelectronics |
| 3 |
2N3295 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 4 |
2N3296 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 5 |
2N3297 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 6 |
2N3440S |
Silicon planar epitaxial NPN transistor intended for high voltage switching and linear amplifier applications |
SGS-ATES |
| 7 |
2N3713 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 8 |
2N3714 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 9 |
2N3715 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 10 |
2N3716 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 11 |
2N3773 |
High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. |
USHA India LTD |
| 12 |
2N3773AR |
NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. |
USHA India LTD |
| 13 |
2N3789 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 14 |
2N3790 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 15 |
2N3791 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 16 |
2N3792 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 17 |
2N4199 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 18 |
2N4200 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 19 |
2N4201 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 20 |
2N4202 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 21 |
2N4203 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 22 |
2N4204 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 23 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 24 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 25 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 26 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 27 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 28 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 29 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
| 30 |
2N5447 |
Silicon PNP Epitaxial Planar AF Transistor |
AEG-TELEFUNKEN |
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