No. |
Part Name |
Description |
Manufacturer |
91 |
30KW180 |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
92 |
30KW180A |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
93 |
30KW198 |
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
94 |
30KW198A |
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
95 |
30KW216 |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
96 |
30KW216A |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
97 |
30KW240 |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
98 |
30KW240A |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
99 |
30KW258 |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
100 |
30KW258A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
101 |
30KW270 |
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
102 |
30KW270A |
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
103 |
30KW288 |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
104 |
30KW288A |
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
105 |
40936 |
20W (PEP) Emitter-Ballasted Overlay Transistor for 2-to-30-MHz Single Sideband Linear Amplifier Applications |
RCA Solid State |
106 |
54121 |
One-Shot With Clear and Complementary Outputs |
National Semiconductor |
107 |
54121DMQB |
One-Shot with Clear and Complementary Outputs |
National Semiconductor |
108 |
54121FMQB |
One-Shot with Clear and Complementary Outputs |
National Semiconductor |
109 |
54123DMQB |
7 V, dual retriggerable one-shot with clear and complementary output |
National Semiconductor |
110 |
54123FMQB |
7 V, dual retriggerable one-shot with clear and complementary output |
National Semiconductor |
111 |
5473DMQB |
7 V, dual master-slave J-K flip-flop with clear and complementary output |
National Semiconductor |
112 |
5473FMQB |
7 V, dual master-slave J-K flip-flop with clear and complementary output |
National Semiconductor |
113 |
5474 |
Dual Positive-Edge Triggered D Flip-Flop with Preset, Clear and Complementary Outputs |
National Semiconductor |
114 |
5474DMQB |
Dual Positive-Edge-Triggered D Flip-Flops with Preset/ Clear and Complementary Outputs |
National Semiconductor |
115 |
5474FMQB |
Dual Positive-Edge-Triggered D Flip-Flops with Preset/ Clear and Complementary Outputs |
National Semiconductor |
116 |
54AC11109 |
DUAL J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET |
Texas Instruments |
117 |
54AC11112 |
DUAL J-K NEGATIVE-EDGE-TRIGGERED FLIP-FLOPS WITH CLEAR AND PRESET |
Texas Instruments |
118 |
54H106 |
Dual JK Edge-Triggered Flip-Flop (With Separate Sets, Clear and Clocks) |
Fairchild Semiconductor |
119 |
54H108 |
Dual JK Edge-Triggered Flip-Flop (With Separate Sets, a Common Clear and Clock) |
Fairchild Semiconductor |
120 |
54H78 |
Dual JK Flip-Flop (With Common Clear and Clock and Separate Set Inputs) |
Fairchild Semiconductor |
| | | |