| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 62 |
2N6122 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 63 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 64 |
2N6123 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 65 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 66 |
2N6124 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 67 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 68 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 69 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 70 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 71 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 72 |
2N929 |
Silicon NPN Epitaxial Planar AF Transistor |
AEG-TELEFUNKEN |
| 73 |
2N929 |
Silicon NPN Epitaxial-Planar AF Transistor |
IPRS Baneasa |
| 74 |
2N930 |
Silicon NPN Epitaxial Planar AF Transistor |
AEG-TELEFUNKEN |
| 75 |
2N930 |
Silicon NPN Epitaxial-Planar AF Transistor |
IPRS Baneasa |
| 76 |
2SC2877 |
Silicon NPN epitaxial planar audio frequency power transistor |
TOSHIBA |
| 77 |
30KW102 |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 78 |
30KW102A |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 79 |
30KW108 |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 80 |
30KW108A |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 81 |
30KW120 |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 82 |
30KW120A |
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 83 |
30KW132 |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 84 |
30KW132A |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 85 |
30KW144 |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 86 |
30KW144A |
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 87 |
30KW156 |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 88 |
30KW156A |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 89 |
30KW168 |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 90 |
30KW168A |
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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