| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4148 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 2 |
1N4150 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 3 |
1N4151 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 4 |
1N4154 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 5 |
1N4448 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 6 |
1N4454 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 7 |
1N914 |
TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES |
DC Components |
| 8 |
2N2095 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 9 |
2N2098 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 10 |
2N2962 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 11 |
2N2963 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 12 |
2N2964 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 13 |
2N2965 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
| 14 |
2N5179 |
NPN silicon RF high frequency transistor 4.5dB - 200MHz |
Motorola |
| 15 |
2SA1125 |
Si PNP epitaxial planar. AF high voltage amplifier. |
Panasonic |
| 16 |
2SA750 |
PNP silicon transistor designed for use in AF low noise amplifier of high-class STEREOSET, RADIO and TAPERECORDER |
NEC |
| 17 |
2SC2352 |
Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note |
NEC |
| 18 |
2SC2995 |
Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, OSC, IF High Frequency Amplifier Applications |
TOSHIBA |
| 19 |
2SC2996 |
Transistor Silicon NPN Epitaxial Type (PCT process) FM/AM RF, MIX, Local, IF High Frequency Amplifier Applications |
TOSHIBA |
| 20 |
2SK2723(JM) |
Nch power MOSFET MP-45F high-speed switching |
NEC |
| 21 |
2SK3053(JM) |
Nch power MOS FET MP-45F high-current switching |
NEC |
| 22 |
2SK3058-Z |
Nch power MOS FET MP-45F high-speed switching |
NEC |
| 23 |
3SK142 |
Field-effect Transistors - Silicon N Channel 4-pole MOS Type - For UHF high-gain low-noise amplification |
Panasonic |
| 24 |
40940 |
5W, 400MHz Silicon NPN Overlay Transistor for VHF/UHF High-Power Amplifiers, Warning - device contains beryllium oxide |
RCA Solid State |
| 25 |
ADM232A |
Part of a family of high speed RS-232 line drivers/receivers offering transmission rates up to 200 kB/s |
Analog Devices |
| 26 |
AGB3302 |
The AGB3302 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... |
Anadigics Inc |
| 27 |
AGB3303 |
The AGB3303 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... |
Anadigics Inc |
| 28 |
AGB3306 |
The AGB3306 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... |
Anadigics Inc |
| 29 |
AGB3307 |
The AGB3307 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ... |
Anadigics Inc |
| 30 |
AN1059 |
DESIGN EQUATIONS OF HIGH-POWER-FACTOR FLYBACK CONVERTERS BASED ON THE L6561 |
SGS Thomson Microelectronics |
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