| No. |
Part Name |
Description |
Manufacturer |
| 31 |
APPLICATION-NOTE |
Typical application of 2SC2352 to VHF Tuner mixer circuit of high conversion Gain - application note |
NEC |
| 32 |
APT10043 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 33 |
APT10M07 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 34 |
APT10M25 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 35 |
APT1201R6 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 36 |
APT20M22 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 37 |
APT30M85 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 38 |
APT5014 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 39 |
APT5015 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 40 |
APT5017 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 41 |
APT5020 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 42 |
APT5027 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs |
Advanced Power Technology |
| 43 |
APT50M50 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 44 |
APT50M80 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 45 |
APT6015 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 46 |
APT6030 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 47 |
APT8015 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 48 |
APT8018 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 49 |
APT8030 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 50 |
APT8065 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 51 |
APT8075 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
Advanced Power Technology |
| 52 |
AT91SAM7A3 |
The AT91SAM7A3 features a 54 MIPS ARM7TDMI processor with 256K bytes of high-speed Flash, 32K bytes of SRAM and a rich peripheral ... |
Atmel |
| 53 |
BD283 |
Silicon EPIBASE NPN Transistor, suitable for use in output stages of Hi-Fi amplifiers up to 15W |
SGS-ATES |
| 54 |
BD284 |
Silicon EPIBASE PNP Transistor, suitable for use in output stages of Hi-Fi amplifiers up to 15W |
SGS-ATES |
| 55 |
BD285 |
Silicon EPIBASE NPN Transistor, suitable for use in output stages of Hi-Fi amplifiers up to 15W |
SGS-ATES |
| 56 |
BD286 |
Silicon EPIBASE PNP Transistor, suitable for use in output stages of Hi-Fi amplifiers up to 15W |
SGS-ATES |
| 57 |
BF254 |
RF-IF High Frequency Transistors |
Micro Electronics |
| 58 |
BF450 |
PNP Silicon RF High-frequency transistor |
Siemens |
| 59 |
BF451 |
PNP Silicon RF High-frequency transistor |
Siemens |
| 60 |
BFR96 |
Epitaxial planar NPN transistor for VHF-UHF high level amplifier |
SGS-ATES |
| | | |
