No. |
Part Name |
Description |
Manufacturer |
121 |
HVM16 |
TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE ASSEMBLIED RECTIFIER |
DC Components |
122 |
HVM5 |
TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE ASSEMBLIED RECTIFIER |
DC Components |
123 |
HVM8 |
TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE ASSEMBLIED RECTIFIER |
DC Components |
124 |
IRF3546M |
60A Dual Integrated Power Block. Two Pairs of High Performance Control and Synchronous MOSFETs. 25V Quad N-Channel HEXFET Power MOSFET |
International Rectifier |
125 |
IRF3546MTRPBF |
60A Dual Integrated Power Block. Two Pairs of High Performance Control and Synchronous MOSFETs. 25V Quad N-Channel HEXFET Power MOSFET |
International Rectifier |
126 |
IRS2093MPBF |
The IRS2093 integrates four channels of high voltage, high performance Class D audio amplifier drivers with PWM modulators and protections. |
International Rectifier |
127 |
KA5H0380R-TU |
SPS consist of high voltage power SenseFET and current mode PWM IC |
Fairchild Semiconductor |
128 |
KA5H0380R-YDTU |
SPS consist of high voltage power SenseFET and current mode PWM IC |
Fairchild Semiconductor |
129 |
KA5L0380R-TU |
SPS consist of high voltage power SenseFET and current mode PWM IC |
Fairchild Semiconductor |
130 |
KA5L0380R-YDTU |
SPS consist of high voltage power SenseFET and current mode PWM IC |
Fairchild Semiconductor |
131 |
KA5M0380 |
SPS consist of high voltage power SenseFET and current mode PWM IC |
Fairchild Semiconductor |
132 |
KA5M0380R-TU |
SPS consist of high voltage power SenseFET and current mode PWM IC |
Fairchild Semiconductor |
133 |
KA5M0380R-YDTU |
SPS consist of high voltage power SenseFET and current mode PWM IC |
Fairchild Semiconductor |
134 |
LA4905 |
17-W, 2-Channel BTL AF High-Efficiency Power Amplifier for Car Stereo Systems |
SANYO |
135 |
LA4906 |
17-W, 2-Channel BTL AF High-Efficiency Power Amplifier for Car Audio Systems |
SANYO |
136 |
MHPA18010 |
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier |
Motorola |
137 |
MHPA19010 |
MHPA19010 1930-1990 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier |
Motorola |
138 |
MHPA21010 |
MHPA21010 2110-2170 MHz, 10 W, 23.7 dB RF High Power LDMOS Amplifier |
Motorola |
139 |
NTE486 |
Silicon NPN Transistor RF High Frequency Amplifier |
NTE Electronics |
140 |
NTE64 |
Silicon NPN Transistor UHF High Speed Switch |
NTE Electronics |
141 |
R1200 |
TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE SILICON RECTIFIER |
DC Components |
142 |
R1200F |
TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE FAST RECOVERY RECTIFIER |
DC Components |
143 |
R1500 |
TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE SILICON RECTIFIER |
DC Components |
144 |
R1500F |
TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE FAST RECOVERY RECTIFIER |
DC Components |
145 |
R1800 |
TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE SILICON RECTIFIER |
DC Components |
146 |
R1800F |
TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE FAST RECOVERY RECTIFIER |
DC Components |
147 |
R2000 |
TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE SILICON RECTIFIER |
DC Components |
148 |
R2000F |
TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE FAST RECOVERY RECTIFIER |
DC Components |
149 |
R2500 |
TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE SILICON RECTIFIER |
DC Components |
150 |
R2500F |
TECHNICAL SPECIFICATIONS OF HIGH VOLTAGE FAST RECOVERY RECTIFIER |
DC Components |
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