| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4009 |
Silicon planar switching diode in miniature design |
Siemens |
| 2 |
1N5152 |
Silicon planar epitaxial varactor diode for use in multipliers up to S band |
Mullard |
| 3 |
1N5153 |
Silicon planar epitaxial varactor diode for use in multipliers up to S band |
Mullard |
| 4 |
1N5155 |
Silicon planar epitaxial varactor diode for use in multipliers up to C band |
Mullard |
| 5 |
1N5157 |
Silicon planar epitaxial varactor diode for use in multipliers C up to X band |
Mullard |
| 6 |
1N5818M-13 |
Diode Schottky 30V 1A 2-Pin MELF |
New Jersey Semiconductor |
| 7 |
1N658 |
Silicon Diode Case Style DO-7, Available in mil. version |
Transitron Electronic |
| 8 |
1N660 |
Silicon Diode Case Style DO-7, Available in mil. version |
Transitron Electronic |
| 9 |
1N661 |
Silicon Diode Case Style DO-7, Available in mil. version |
Transitron Electronic |
| 10 |
1N662 |
Silicon Diode Case Style DO-7, Available in mil. version |
Transitron Electronic |
| 11 |
1N663 |
Silicon Diode Case Style DO-7, Available in mil. version |
Transitron Electronic |
| 12 |
2N1412 |
PNP germanium power transistor for high-voltage in military and industrial equipment |
Motorola |
| 13 |
2N1412A |
PNP germanium power transistor for high-voltage in military and industrial equipment |
Motorola |
| 14 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
| 15 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 16 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 17 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 18 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 19 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 20 |
2N3118 |
Triple-diffused planar transistor of the silicon NPN type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment |
RCA Solid State |
| 21 |
2N331 |
PNP germanium transistor for audio range amplifier and switching service in military equipment |
Motorola |
| 22 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
| 23 |
2N4212 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 24 |
2N4213 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 25 |
2N4214 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 26 |
2N4215 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 27 |
2N4216 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 28 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
| 29 |
2N4430 |
Trans GP BJT NPN 40V 0.001A 4-Pin MT66 |
New Jersey Semiconductor |
| 30 |
2N5161 |
PNP silicon RF power transistor for use in military and industrial equipment |
Motorola |
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