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Datasheets for 300

Datasheets found :: 66800
Page: | 32 | 33 | 34 | 35 | 36 | 37 | 38 | 39 | 40 |
No. Part Name Description Manufacturer
1051 2N3007 SCRs (Silicon Controlled Rectifiers) Boca Semiconductor Corporation
1052 2N3007 Leaded Thyristor SCR Central Semiconductor
1053 2N3007 THYRISTOR Motorola
1054 2N3007 Trans GP BJT 100V 0.35A 3-Pin TO-18 New Jersey Semiconductor
1055 2N3008 SCRs (Silicon Controlled Rectifiers) Boca Semiconductor Corporation
1056 2N3008 Leaded Thyristor SCR Central Semiconductor
1057 2N3008 THYRISTOR Motorola
1058 2N3008 Trans GP BJT 200V 0.35A 3-Pin TO-18 New Jersey Semiconductor
1059 2N3009 NPN SILICON HIGH SPEED SWITCHING TRANSISTORS Central Semiconductor
1060 2N3009 NPN silicon epitaxial switching transistor Motorola
1061 2N3009 Silicon NPN Transistor Motorola
1062 2N3009 NPN switching transistor National Semiconductor
1063 2N3009 Trans GP BJT NPN 15V 3-Pin TO-18 Box New Jersey Semiconductor
1064 2N3009 Silicon transistor, high speed saturated switches SGS-ATES
1065 2N3009 SEPT® NPN planar epitaxial low noise transistor Sprague
1066 2N3300 Leaded Power Transistor General Purpose Central Semiconductor
1067 2N3300 NPN silicon annular transistor Motorola
1068 2N3300 Silicon NPN Transistor Motorola
1069 2N3300 NPN Transistor - General Purpose AMPS and Switches National Semiconductor
1070 2N3300 Trans GP BJT NPN 30V 3-Pin TO-39 Box New Jersey Semiconductor
1071 2N3300 Silicon transistor, general purpose amplifiers and switches SGS-ATES
1072 2N3300 Silicon transistor, high speed saturated switches SGS-ATES
1073 2N3500 1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 20 hFE. Continental Device India Limited
1074 2N3501 1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 35 hFE. Continental Device India Limited
1075 2N3585 Trans GP BJT NPN 300V 2A 3-Pin(2+Tab) TO-66 New Jersey Semiconductor
1076 2N3651 35A silicon controlled rectifier. Vrsom 300V. General Electric Solid State
1077 2N3700 0.500W General Purpose NPN Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
1078 2N3702 0.625W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.600A Ic, 60 - 300 hFE Continental Device India Limited
1079 2N3704 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 100 - 300 hFE Continental Device India Limited
1080 2N3847 Trans GP BJT NPN 300V 20A 3-Pin TO-63 New Jersey Semiconductor


Datasheets found :: 66800
Page: | 32 | 33 | 34 | 35 | 36 | 37 | 38 | 39 | 40 |



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