| No. |
Part Name |
Description |
Manufacturer |
| 1171 |
2N7002BKS |
60 V, 300 mA dual N-channel Trench MOSFET |
Nexperia |
| 1172 |
2N7002BKS |
60 V, 300 mA dual N-channel Trench MOSFET |
NXP Semiconductors |
| 1173 |
2N7593U3 |
250V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads. |
International Rectifier |
| 1174 |
2N7593U3 |
250V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads. |
International Rectifier |
| 1175 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
| 1176 |
2SA1300 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 1177 |
2SB1035 |
900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447 |
Isahaya Electronics Corporation |
| 1178 |
2SB1300 |
PNP SILICON TRANSISTOR |
NEC |
| 1179 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
| 1180 |
2SC3000 |
NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications |
SANYO |
| 1181 |
2SC3001 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 1182 |
2SC3006 |
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 1183 |
2SC3007 |
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) |
TOSHIBA |
| 1184 |
2SC3243 |
900mW Lead frame NPN transistor, maximum rating: 60V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SA1283 |
Isahaya Electronics Corporation |
| 1185 |
2SC3244 |
900mW Lead frame NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1284 |
Isahaya Electronics Corporation |
| 1186 |
2SC3246 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1.5A Ic, 400 to 3000 hFE. Complementary 2SA1286 |
Isahaya Electronics Corporation |
| 1187 |
2SC3271F |
Chroma Amplifier Transistor(300V,0.1A) |
ROHM |
| 1188 |
2SC3300 |
Silicon NPN Power Transistors TO-3PN package |
Savantic |
| 1189 |
2SC3416S |
Chroma Amplifier Transistor(300V,0.1A) |
ROHM |
| 1190 |
2SC3438 |
500mW SMD NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1368 |
Isahaya Electronics Corporation |
| 1191 |
2SC3676 |
NPN Triple Diffused Planar Silicon Transistor 900V/300mA High-Voltage Amplifier High-Voltage Switching Applications |
SANYO |
| 1192 |
2SC400 |
Silicon NPN epitaxial planar RF transistor, fT=300MHz |
TOSHIBA |
| 1193 |
2SC4300 |
Silicon NPN Transistor |
Sanken |
| 1194 |
2SC4300 |
Silicon NPN Power Transistors TO-3PML package |
Savantic |
| 1195 |
2SC4357 |
500mW SMD NPN transistor, maximum rating: 60V Vceo, 2A Ic, 55 to 300 hFE. |
Isahaya Electronics Corporation |
| 1196 |
2SC4631LS |
NPN Triple Diffused Planar Silicon Transistor 900V / 300mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 1197 |
2SC5058S |
25V,50mA, 300MHz high-frequency amplifier transistor |
ROHM |
| 1198 |
2SC5300 |
Ultrahigh-Definition Color Display Horizontal Deflection Output Applications |
SANYO |
| 1199 |
2SC5551A |
RF Transistor, 30V, 300mA, fT=3.5GHz, NPN Single PCP |
ON Semiconductor |
| 1200 |
2SC6046 |
200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE. |
Isahaya Electronics Corporation |
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