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Datasheets for 300

Datasheets found :: 66800
Page: | 33 | 34 | 35 | 36 | 37 | 38 | 39 | 40 | 41 |
No. Part Name Description Manufacturer
1081 2N3904-T18 40V Vce, 0.2A Ic, 300MHz NPN bipolar transistor SemeLAB
1082 2N3924 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
1083 2N3925 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
1084 2N3926 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
1085 2N3927 NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz Motorola
1086 2N4032 0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
1087 2N4033 0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
1088 2N4240 Trans GP BJT NPN 300V 2A 3-Pin(2+Tab) TO-66 New Jersey Semiconductor
1089 2N424A Trans GP BJT NPN 300V 2A 3-Pin(2+Tab) TO-66 New Jersey Semiconductor
1090 2N4300 Leaded Small Signal Transistor General Purpose Central Semiconductor
1091 2N4300 Silicon NPN Transistor Motorola
1092 2N5088 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.050A Ic, 300 - 900 hFE Continental Device India Limited
1093 2N5208 PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz Motorola
1094 2N5240 Trans GP BJT NPN 300V 5A 3-Pin(2+Tab) TO-3 New Jersey Semiconductor
1095 2N5306 Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. General Electric Solid State
1096 2N5307 Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. General Electric Solid State
1097 2N5308 Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. General Electric Solid State
1098 2N5308A Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. General Electric Solid State
1099 2N5366 Planar epitaxial passivated PNP silicon transistor. 40V, 300mA. General Electric Solid State
1100 2N5416 1.000W General Purpose PNP Metal Can Transistor. 300V Vceo, 1.000A Ic, 30 - 120 hFE. Continental Device India Limited
1101 2N5416 Trans GP BJT PNP 300V 1A 3-Pin TO-39 Box New Jersey Semiconductor
1102 2N5416S Trans GP BJT PNP 300V 1A 3-Pin TO-39 New Jersey Semiconductor
1103 2N5416SB Trans GP BJT PNP 300V 1A 3-Pin TO-39 New Jersey Semiconductor
1104 2N5416SGGGJ Trans GP BJT PNP 300V 1A 3-Pin TO-39 New Jersey Semiconductor
1105 2N5656 Trans GP BJT NPN 300V 1A 3-Pin TO-126 Box New Jersey Semiconductor
1106 2N5661 Trans GP BJT NPN 300V 2A 3-Pin(2+Tab) TO-66 New Jersey Semiconductor
1107 2N5663 Trans GP BJT NPN 300V 2A 3-Pin TO-5 New Jersey Semiconductor
1108 2N5665 Trans GP BJT NPN 300V 5A 3-Pin(2+Tab) TO-66 New Jersey Semiconductor
1109 2N5667 Trans GP BJT NPN 300V 5A 3-Pin TO-5 New Jersey Semiconductor
1110 2N5683 POWER TRANSISTORS(50A,300W) MOSPEC Semiconductor


Datasheets found :: 66800
Page: | 33 | 34 | 35 | 36 | 37 | 38 | 39 | 40 | 41 |



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