No. |
Part Name |
Description |
Manufacturer |
1051 |
2N6107 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
1052 |
2N6107 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5496 |
SESCOSEM |
1053 |
2N6107 |
Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package |
SGS-ATES |
1054 |
2N6108 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1055 |
2N6108 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
1056 |
2N6109 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1057 |
2N6109 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
1058 |
2N6109 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5492 |
SESCOSEM |
1059 |
2N6109 |
Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package |
SGS-ATES |
1060 |
2N6110 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1061 |
2N6110 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
1062 |
2N6111 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
1063 |
2N6111 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
1064 |
2N6111 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5494 |
SESCOSEM |
1065 |
2N6111 |
Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package |
SGS-ATES |
1066 |
2N6121 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. |
General Electric Solid State |
1067 |
2N6121 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
1068 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1069 |
2N6122 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
1070 |
2N6122 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
1071 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1072 |
2N6123 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
1073 |
2N6123 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
1074 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1075 |
2N6124 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. |
General Electric Solid State |
1076 |
2N6124 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
1077 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
1078 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
1079 |
2N6125 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
1080 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| | | |