| No. |
Part Name |
Description |
Manufacturer |
| 991 |
2N5784 |
SILICON EPITAXIAL NPN TRANSISTOR |
SemeLAB |
| 992 |
2N5785 |
Silicon N-P-N epitaxial-base transistor. 65V, 10W. |
General Electric Solid State |
| 993 |
2N5786 |
Silicon N-P-N epitaxial-base transistor. 45V, 10W. |
General Electric Solid State |
| 994 |
2N5786 |
SILICON EPITAXIAL NPN TRANSISTOR |
SemeLAB |
| 995 |
2N5829 |
Silicon PNP Epitaxial Planar HF Transistor |
IPRS Baneasa |
| 996 |
2N5875 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 997 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 998 |
2N5876 |
Silicon epitaxial-base PNP power transistor |
SGS-ATES |
| 999 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1000 |
2N5877 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 1001 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1002 |
2N5878 |
Silicon epitaxial-base NPN power transistor |
SGS-ATES |
| 1003 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 1004 |
2N6032 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
| 1005 |
2N6033 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
| 1006 |
2N6034 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1007 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1008 |
2N6035 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1009 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1010 |
2N6036 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1011 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1012 |
2N6037 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1013 |
2N6037 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1014 |
2N6038 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1015 |
2N6038 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1016 |
2N6039 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 1017 |
2N6039 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1018 |
2N6050 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
| 1019 |
2N6050 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 1020 |
2N6051 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
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