No. |
Part Name |
Description |
Manufacturer |
901 |
2N5014 |
SILICON EPITAXIAL NPN TRANSISTOR |
SemeLAB |
902 |
2N5038 |
Silicon planar multiepitaxial NPN transistor |
SGS-ATES |
903 |
2N5039 |
Silicon planar multiepitaxial NPN transistor |
SGS-ATES |
904 |
2N5086 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
905 |
2N5089 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
906 |
2N5109 |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
907 |
2N5109 |
Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) |
SGS-ATES |
908 |
2N5109A |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
909 |
2N5109B |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
910 |
2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
911 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
912 |
2N5180 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
913 |
2N5190 |
NPN Epitaxial Power Transistor |
National Semiconductor |
914 |
2N5190 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
915 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
916 |
2N5191 |
NPN Epitaxial Power Transistor |
National Semiconductor |
917 |
2N5191 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
918 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
919 |
2N5192 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
920 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
921 |
2N5193 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
922 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
923 |
2N5194 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
924 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
925 |
2N5195 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
926 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
927 |
2N5202 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
928 |
2N5210 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
929 |
2N5232 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
930 |
2N5232A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
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