No. |
Part Name |
Description |
Manufacturer |
961 |
2N5550 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
962 |
2N5550 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
963 |
2N5550 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
964 |
2N5550 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
965 |
2N5550 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
966 |
2N5550BU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
967 |
2N5550TA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
968 |
2N5550TAR |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
969 |
2N5550TF |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
970 |
2N5550TFR |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
971 |
2N5550_D26Z |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
972 |
2N5550_J24Z |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
973 |
2N5551 |
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR |
Boca Semiconductor Corporation |
974 |
2N5551 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
975 |
2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
976 |
2N5551 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
977 |
2N5629 |
Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. |
General Electric Solid State |
978 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
979 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
980 |
2N5635 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
981 |
2N5636 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
982 |
2N5637 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
983 |
2N5671 |
Silicon multiepitaxial planar NPN transistor |
SGS-ATES |
984 |
2N5672 |
Silicon multiepitaxial planar NPN transistor |
SGS-ATES |
985 |
2N5769 |
NPN silicon epitaxial planar transistor |
Mikroelektronikai Vallalat |
986 |
2N5770 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
987 |
2N5781 |
Silicon P-N-P epitaxial-base transistor. -80V, 10W. |
General Electric Solid State |
988 |
2N5782 |
Silicon P-N-P epitaxial-base transistor. -65V, 10W. |
General Electric Solid State |
989 |
2N5783 |
Silicon P-N-P epitaxial-base transistor. -45V, 10W. |
General Electric Solid State |
990 |
2N5784 |
Silicon N-P-N epitaxial-base transistor. 80V, 10W. |
General Electric Solid State |
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