| No. |
Part Name |
Description |
Manufacturer |
| 871 |
2N5781 |
Silicon P-N-P epitaxial-base transistor. -80V, 10W. |
General Electric Solid State |
| 872 |
2N5782 |
Silicon P-N-P epitaxial-base transistor. -65V, 10W. |
General Electric Solid State |
| 873 |
2N5783 |
Silicon P-N-P epitaxial-base transistor. -45V, 10W. |
General Electric Solid State |
| 874 |
2N5784 |
Silicon N-P-N epitaxial-base transistor. 80V, 10W. |
General Electric Solid State |
| 875 |
2N5784 |
SILICON EPITAXIAL NPN TRANSISTOR |
SemeLAB |
| 876 |
2N5785 |
Silicon N-P-N epitaxial-base transistor. 65V, 10W. |
General Electric Solid State |
| 877 |
2N5786 |
Silicon N-P-N epitaxial-base transistor. 45V, 10W. |
General Electric Solid State |
| 878 |
2N5786 |
SILICON EPITAXIAL NPN TRANSISTOR |
SemeLAB |
| 879 |
2N5829 |
Silicon PNP Epitaxial Planar HF Transistor |
IPRS Baneasa |
| 880 |
2N5875 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 881 |
2N5876 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 882 |
2N5877 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 883 |
2N5878 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 884 |
2N6034 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 885 |
2N6035 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 886 |
2N6036 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 887 |
2N6037 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 888 |
2N6038 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 889 |
2N6039 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 890 |
2N6050 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 891 |
2N6051 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 892 |
2N6052 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 893 |
2N6053 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 894 |
2N6054 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 895 |
2N6055 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 896 |
2N6056 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 897 |
2N6057 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 898 |
2N6058 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 899 |
2N6059 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
| 900 |
2N6078 |
NPN MULTI-EPITAXIAL POWER TRANSISTOR |
SemeLAB |
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