No. |
Part Name |
Description |
Manufacturer |
811 |
2N5086 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
812 |
2N5089 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
813 |
2N5109 |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
814 |
2N5109 |
Epitaxial planar NPN transistor, designed for CATV-MATV amplifier applications over a wide frequency range (40 to 860MHz) |
SGS-ATES |
815 |
2N5109A |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
816 |
2N5109B |
Silicon NPN Epitaxial-Planar HF Transistor |
IPRS Baneasa |
817 |
2N5179 |
Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment |
RCA Solid State |
818 |
2N5179 |
Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz |
SGS-ATES |
819 |
2N5180 |
Silicon NPN Epitaxial Planar RF Transistor |
RCA Solid State |
820 |
2N5190 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
821 |
2N5191 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
822 |
2N5192 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
823 |
2N5193 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
824 |
2N5194 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
825 |
2N5195 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
826 |
2N5202 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
827 |
2N5210 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
828 |
2N5232 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
829 |
2N5232A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
830 |
2N5249 |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
831 |
2N5249A |
Planar epitaxial passivated NPN silicon transistor. 50V, 100mA. |
General Electric Solid State |
832 |
2N5306 |
Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. |
General Electric Solid State |
833 |
2N5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
834 |
2N5308 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
835 |
2N5308A |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
836 |
2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE |
SemeLAB |
837 |
2N5366 |
Planar epitaxial passivated PNP silicon transistor. 40V, 300mA. |
General Electric Solid State |
838 |
2N5400 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
839 |
2N5400 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
840 |
2N5400 |
PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
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