| No. |
Part Name |
Description |
Manufacturer |
| 1081 |
2N6403 |
Thyristor, 16 amperes, 400 volt |
Teccor Electronics |
| 1082 |
2N6404 |
Thyristor, 16 amperes, 600 volt |
Teccor Electronics |
| 1083 |
2N6424 |
PNP transistor, 225V, 0.25A |
SemeLAB |
| 1084 |
2N6500 |
NPN transistor, 110V, 4A |
SemeLAB |
| 1085 |
2N6504 |
Thyristor, 25 amperes, 50 volt |
Teccor Electronics |
| 1086 |
2N6505 |
Thyristor, 25 amperes, 100 volt |
Teccor Electronics |
| 1087 |
2N6506 |
Thyristor, 25 amperes, 200 volt |
Teccor Electronics |
| 1088 |
2N6507 |
Thyristor, 25 amperes, 400 volt |
Teccor Electronics |
| 1089 |
2N6508 |
Thyristor, 25 amperes, 600 volt |
Teccor Electronics |
| 1090 |
2N653 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 1091 |
2N654 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 1092 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 1093 |
2N6618 |
NPN Silicon High Frequency Transistor, capable of MIL-S-19500 and MIL-STD-750/883 |
Motorola |
| 1094 |
2N665 |
Germanium PNP Power Transistor, TO-3 Package |
Silicon Transistor Corporation |
| 1095 |
2N6679 |
NPN Silicon High Frequency Transistor, capable of MIL-S-19500 and MIL-STD-750/883 |
Motorola |
| 1096 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 1097 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 1098 |
2N702 |
NPN silicon annular transistor, TO-18 case |
Motorola |
| 1099 |
2N703 |
NPN silicon annular transistor, TO-18 case |
Motorola |
| 1100 |
2N706 |
Silicon Switching Transistor, for improved performance see ITT 2N2368 |
ITT Semiconductors |
| 1101 |
2N706 |
Silicon NPN transistor, fast switching |
SESCOSEM |
| 1102 |
2N706 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1103 |
2N706A |
Silicon Switching Transistor, for improved performance see ITT 2N2368 |
ITT Semiconductors |
| 1104 |
2N706A |
Silicon NPN transistor, fast switching |
SESCOSEM |
| 1105 |
2N706A |
Transistor, high speed saturated switches |
SGS-ATES |
| 1106 |
2N706B |
Silicon Switching Transistor, for improved performance see ITT 2N2368 |
ITT Semiconductors |
| 1107 |
2N707 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
| 1108 |
2N708 |
Silicon NPN transistor, fast switching |
SESCOSEM |
| 1109 |
2N708 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1110 |
2N709 |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
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