| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
2N709 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1112 |
2N709A |
NPN silicon epitaxial planar transistor, extremely fast switching and ultra high frequency applications |
ICCE |
| 1113 |
2N709A |
Transistor, high speed saturated switches |
SGS-ATES |
| 1114 |
2N722 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1115 |
2N735 |
Silicon NPN transistor, general purpose |
SESCOSEM |
| 1116 |
2N735A |
Silicon NPN transistor, general purpose |
SESCOSEM |
| 1117 |
2N736 |
Silicon NPN transistor, general purpose |
SESCOSEM |
| 1118 |
2N736B |
Silicon NPN transistor, general purpose |
SESCOSEM |
| 1119 |
2N741 |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 1120 |
2N741A |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 1121 |
2N743 |
Silicon NPN transistor, fast switching |
SESCOSEM |
| 1122 |
2N743 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1123 |
2N744 |
Silicon NPN transistor, fast switching |
SESCOSEM |
| 1124 |
2N744 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1125 |
2N753 |
Silicon NPN transistor, fast switching |
SESCOSEM |
| 1126 |
2N753 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1127 |
2N834 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1128 |
2N834A |
Transistor, high speed saturated switches |
SGS-ATES |
| 1129 |
2N869A |
Transistor, high speed saturated switches |
SGS-ATES |
| 1130 |
2N914 |
Silicon NPN transistor, fast switching |
SESCOSEM |
| 1131 |
2N914 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1132 |
2N917 |
Silicon NPN transistor, VHF-UHF amplification and oscillation |
SESCOSEM |
| 1133 |
2N918 |
Silicon NPN transistor, VHF-UHF amplification and oscillation |
SESCOSEM |
| 1134 |
2N918 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
| 1135 |
2N929 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 1136 |
2N929 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 1137 |
2N930 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 1138 |
2N930 |
Silicon NPN transistor, low noise, low level amplification |
SESCOSEM |
| 1139 |
2N995 |
Transistor, high speed saturated switches |
SGS-ATES |
| 1140 |
2SA1060 |
Silicon PNP epitaxial base mesa transistor, 80V, 5A |
Panasonic |
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