No. |
Part Name |
Description |
Manufacturer |
1141 |
2SA1094 |
Silicon PNP epitaxial transistor, for power amplifier applications |
TOSHIBA |
1142 |
2SA1120 |
Silicon PNP epitaxial transistor, strobo flash and audio power amplifier applications |
TOSHIBA |
1143 |
2SA1146 |
Silicon PNP epitaxial transistor, audio frequency, low power amplifier applications |
TOSHIBA |
1144 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
1145 |
2SA1225 |
Silicon PNP epitaxial power transistor, complementary 2SC2983 |
TOSHIBA |
1146 |
2SA1235A |
200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 |
Isahaya Electronics Corporation |
1147 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
1148 |
2SA1286 |
SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
1149 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
1150 |
2SA1302 |
Silicon PNP triple diffused power transistor, complementary 2SC3281 |
TOSHIBA |
1151 |
2SA1363 |
500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443 |
Isahaya Electronics Corporation |
1152 |
2SA1366 |
150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 |
Isahaya Electronics Corporation |
1153 |
2SA1369 |
FOR SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
Isahaya Electronics Corporation |
1154 |
2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 |
Isahaya Electronics Corporation |
1155 |
2SA15 |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
1156 |
2SA15H |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
1157 |
2SA17H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
1158 |
2SA18H |
Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching |
Hitachi Semiconductor |
1159 |
2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212 |
Isahaya Electronics Corporation |
1160 |
2SA1995 |
450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. |
Isahaya Electronics Corporation |
1161 |
2SA1998 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE. |
Isahaya Electronics Corporation |
1162 |
2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 |
Isahaya Electronics Corporation |
1163 |
2SA2012 |
Bipolar Transistor, -30V, -5A, Low VCE(sat) PNP Single PCP |
ON Semiconductor |
1164 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
1165 |
2SA351 |
Germanium PNP Transistor Drift Junction, intended for use in SW Oscillator, Frequency Converter |
Hitachi Semiconductor |
1166 |
2SA429G |
Silicon NPN triple diffused planar transistor, Nixie Tube Driver applications, high voltage Switching applications |
TOSHIBA |
1167 |
2SA495G |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
1168 |
2SA499 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
1169 |
2SA500 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
1170 |
2SA502 |
Silicon PNP epitaxial planar transistor, fluorescent numerical indicator tube drive applications |
TOSHIBA |
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