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Datasheets for TOR,

Datasheets found :: 9362
Page: | 35 | 36 | 37 | 38 | 39 | 40 | 41 | 42 | 43 |
No. Part Name Description Manufacturer
1141 2SA1094 Silicon PNP epitaxial transistor, for power amplifier applications TOSHIBA
1142 2SA1120 Silicon PNP epitaxial transistor, strobo flash and audio power amplifier applications TOSHIBA
1143 2SA1146 Silicon PNP epitaxial transistor, audio frequency, low power amplifier applications TOSHIBA
1144 2SA12 Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier Hitachi Semiconductor
1145 2SA1225 Silicon PNP epitaxial power transistor, complementary 2SC2983 TOSHIBA
1146 2SA1235A 200mW SMD PNP transistor, maximum rating: -50V Vceo, -200mA Ic, 150 to 500 hFE. Improve on 2SA1235 Isahaya Electronics Corporation
1147 2SA1284 900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 Isahaya Electronics Corporation
1148 2SA1286 SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE Isahaya Electronics Corporation
1149 2SA12H Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier Hitachi Semiconductor
1150 2SA1302 Silicon PNP triple diffused power transistor, complementary 2SC3281 TOSHIBA
1151 2SA1363 500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443 Isahaya Electronics Corporation
1152 2SA1366 150mW SMD PNP transistor, maximum rating: -50V Vceo, -400mA Ic, 90 to 500 hFE. Complementary 2SC3441 Isahaya Electronics Corporation
1153 2SA1369 FOR SMALL TYPE MOTOR, PLUNGER DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE Isahaya Electronics Corporation
1154 2SA1398 900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 Isahaya Electronics Corporation
1155 2SA15 Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter Hitachi Semiconductor
1156 2SA15H Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier Hitachi Semiconductor
1157 2SA17H Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
1158 2SA18H Germanium PNP Alloyed Junction Transistor, intended for use in Medium Speed Switching Hitachi Semiconductor
1159 2SA1946 500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212 Isahaya Electronics Corporation
1160 2SA1995 450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. Isahaya Electronics Corporation
1161 2SA1998 600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE. Isahaya Electronics Corporation
1162 2SA2002 600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 Isahaya Electronics Corporation
1163 2SA2012 Bipolar Transistor, -30V, -5A, Low VCE(sat) PNP Single PCP ON Semiconductor
1164 2SA350 Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier Hitachi Semiconductor
1165 2SA351 Germanium PNP Transistor Drift Junction, intended for use in SW Oscillator, Frequency Converter Hitachi Semiconductor
1166 2SA429G Silicon NPN triple diffused planar transistor, Nixie Tube Driver applications, high voltage Switching applications TOSHIBA
1167 2SA495G Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications TOSHIBA
1168 2SA499 Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications TOSHIBA
1169 2SA500 Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications TOSHIBA
1170 2SA502 Silicon PNP epitaxial planar transistor, fluorescent numerical indicator tube drive applications TOSHIBA


Datasheets found :: 9362
Page: | 35 | 36 | 37 | 38 | 39 | 40 | 41 | 42 | 43 |



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