| No. |
Part Name |
Description |
Manufacturer |
| 10951 |
BBY58-02W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 10952 |
BBY58-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 10953 |
BBY58-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) |
Siemens |
| 10954 |
BBY66-02V |
Varactordiodes - Silicon high Q hyperabrupt tuning diode for VCO applications |
Infineon |
| 10955 |
BBY66-05 |
Varactordiodes - Silicon high Q hyperabrupt tuning diode for VCO applications |
Infineon |
| 10956 |
BBY66-05W |
Varactordiodes - Silicon high Q hyperabrupt tuning diode for VCO applications |
Infineon |
| 10957 |
BCR402 |
Light Emitting Diode (LED) Driver IC Provides Constant LED Current Independent of Supply Voltage Variation |
Infineon |
| 10958 |
BDW26 |
Bi-Directional Trigger Diode (DIAC) |
Transitron Electronic |
| 10959 |
BDW32 |
Bi-Directional Trigger Diode (DIAC) |
Transitron Electronic |
| 10960 |
BDW38 |
Bi-Directional Trigger Diode (DIAC) |
Transitron Electronic |
| 10961 |
BGX400 |
General Purpose Diodes - Silicon Switching Diode halfbridge rectifier |
Infineon |
| 10962 |
BGX50A |
General Purpose Diodes - Silicon Switching Diode Array with bridge configuration |
Infineon |
| 10963 |
BGX50A |
Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) |
Siemens |
| 10964 |
BGX50A |
Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) |
Siemens |
| 10965 |
BGY12D-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 10966 |
BGY12E-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 10967 |
BGY12F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 10968 |
BGY12F-2I |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 10969 |
BGY13D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 10970 |
BGY13E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 10971 |
BGY13F-2H |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 10972 |
BGY13FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 10973 |
BGY14D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 10974 |
BGY14E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 10975 |
BGY14FA1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 10976 |
BGY26D-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 10977 |
BGY26E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 10978 |
BGY26FA-1G |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 10979 |
BGY27DA-1D |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 10980 |
BGY27DB-1E |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
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