| No. |
Part Name |
Description |
Manufacturer |
| 10981 |
BGY27E-1F |
Avalanche (IMPATT) diode for generation and amplification of microwave-power |
Siemens |
| 10982 |
BS05155Y |
Schottky diode 5V |
IPRS Baneasa |
| 10983 |
BS10106Y |
Schottky diode 15V |
IPRS Baneasa |
| 10984 |
BS10155Y |
Schottky diode 10V |
IPRS Baneasa |
| 10985 |
BS20106Q |
Schottky Diode Rings |
IPRS Baneasa |
| 10986 |
BS20106Q |
Schottky diode Quads 20V 0.6V |
IPRS Baneasa |
| 10987 |
BS20107Y |
Schottky diode 20V |
IPRS Baneasa |
| 10988 |
BS30016Q |
Schottky Diode Rings |
IPRS Baneasa |
| 10989 |
BS30057Q |
Schottky diode Quads 30V 0.7V |
IPRS Baneasa |
| 10990 |
BSM100GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) |
Siemens |
| 10991 |
BSM150GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) |
Siemens |
| 10992 |
BSM150GAL120DN2E3166 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) |
Siemens |
| 10993 |
BSM150GB120DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 10994 |
BSM150GB170DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 10995 |
BSM200GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Package with insulated metal base plate) |
Siemens |
| 10996 |
BSM25GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 10997 |
BSM300GA120DN2E3166 |
IGBT Power Module (Single switch Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 10998 |
BSM300GA170DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 10999 |
BSM35GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) |
Siemens |
| 11000 |
BSM50GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate) |
Siemens |
| 11001 |
BSM75GAL120DN2 |
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes) |
Siemens |
| 11002 |
BU2001 |
βU2001 5 NPN 10mA transistors 1 Zener diode |
IPRS Baneasa |
| 11003 |
BU406D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 11004 |
BU407D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 11005 |
BU408D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 11006 |
BU606D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 11007 |
BU607D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 11008 |
BU608D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 11009 |
BUD44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS |
ON Semiconductor |
| 11010 |
BUK638-1000 |
PowerMOS transistor Fast recovery diode FET |
Philips |
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