| No. |
Part Name |
Description |
Manufacturer |
| 11011 |
BUK638-1000A |
PowerMOS transistor Fast recovery diode FET |
Philips |
| 11012 |
BUK638-1000B |
PowerMOS transistor Fast recovery diode FET |
Philips |
| 11013 |
BUK638-500B |
PowerMOS transistor Fast recovery diode FET |
Philips |
| 11014 |
BUK638-800 |
PowerMOS transistor Fast recovery diode FET |
Philips |
| 11015 |
BUK638-800A |
PowerMOS transistor Fast recovery diode FET |
Philips |
| 11016 |
BUK638-800B |
PowerMOS transistor Fast recovery diode FET |
Philips |
| 11017 |
BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 11018 |
BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 11019 |
BUP200D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free) |
Siemens |
| 11020 |
BUP305 |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) |
Siemens |
| 11021 |
BUP305D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) |
Siemens |
| 11022 |
BUP306D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) |
Siemens |
| 11023 |
BUP307D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) |
Siemens |
| 11024 |
BUP311D |
IGBT With Antiparallel Diode Preliminary data sheet |
Infineon |
| 11025 |
BUP313D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free) |
Siemens |
| 11026 |
BUP314D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) |
Siemens |
| 11027 |
BUP400D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) |
Siemens |
| 11028 |
BUP410D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) |
Siemens |
| 11029 |
BUP602D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) |
Siemens |
| 11030 |
BUP603D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) |
Siemens |
| 11031 |
BUT14 |
25A NPN silicon power darlington transistor with BASE-EMITTER speedup diode 850V 175W SWITCHMODE series |
Motorola |
| 11032 |
BUT15 |
20A NPN silicon power darlington transistor with BASE-EMITTER speedup diode 1000V 175W SWITCHMODE series |
Motorola |
| 11033 |
BUT35 |
40A NPN silicon power darlington transistor with BASE-EMITTER speedup diode 1000V 250W SWITCHMODE series |
Motorola |
| 11034 |
BXY27 |
Silicon planar epitaxial varactor diode for use in multipliers up to S band and input powers up to 10W |
Mullard |
| 11035 |
BXY27 |
Silicon planar epitaxial power varactor diode for frequency multipliers up to S-band |
VALVO |
| 11036 |
BXY28 |
Silicon planar epitaxial varactor diode for use in high C efficiency multipliers in the 2-4 GHz range |
Mullard |
| 11037 |
BXY28 |
Silicon planar epitaxial power varactor diode for frequency multipliers up to C-band |
VALVO |
| 11038 |
BXY29 |
Silicon planar epitaxial varactor diode for use in frequency multiplier circuits in the 4-8GHz range |
Mullard |
| 11039 |
BXY29 |
Silicon planar epitaxial power varactor diode for frequency multipliers up to the X-band |
VALVO |
| 11040 |
BXY32 |
Silicon planar step recovery diode for high order frequency multipliers with outputs in X band |
Mullard |
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