| No. |
Part Name |
Description |
Manufacturer |
| 11251 |
MEE300-06DA |
600V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11252 |
MEE75-12DA |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
| 11253 |
MEK150-04DA |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
| 11254 |
MEK250-12DA |
1200V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11255 |
MEK300-06DA |
600V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11256 |
MEK350-02DA |
200V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11257 |
MEK75-12DA |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
| 11258 |
MEO450-12DA |
1200V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11259 |
MEO500-06DA |
600V fast recovery epitaxial diode (FRED) module |
IXYS |
| 11260 |
MEO550-02DA |
Fast Recovery Epitaxial Diode (FRED) Module |
IXYS Corporation |
| 11261 |
MF3304 |
PNP silicon epitaxial transistor designed for low-level, high-speed switching applications |
Motorola |
| 11262 |
MH0810 |
EPITAXIAL TRANSISTORS FOR 3-5W AF OUTPUT |
Micro Electronics |
| 11263 |
MH8100 |
EPITAXIAL TRANSISTORS FOR 3-5W AF OUTPUT |
Micro Electronics |
| 11264 |
MJ1000 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 11265 |
MJ1001 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 11266 |
MJ15003 |
Silicon N-P-N epitaxial-base high power transistor. 140V, 250W. |
General Electric Solid State |
| 11267 |
MJ15004 |
Silicon P-N-P epitaxial-base high-power transistor. -140V, 250W. |
General Electric Solid State |
| 11268 |
MJ15015 |
Silicon Epitaxial Planar Transistor |
Wing Shing Computer Components |
| 11269 |
MJ15022 |
Silicon N-P-N epitaxial-base high power transistor. |
General Electric Solid State |
| 11270 |
MJ15024 |
Silicon N-P-N epitaxial-base high power transistor. |
General Electric Solid State |
| 11271 |
MJ2500 |
60V silicon epitaxial-base darlington |
Comset Semiconductors |
| 11272 |
MJ2500 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
| 11273 |
MJ2501 |
80V silicon epitaxial-base darlington |
Comset Semiconductors |
| 11274 |
MJ2501 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
| 11275 |
MJ2955 |
Silicon P-N-P epitaxial-base high-power transistor. -100V, 150W. |
General Electric Solid State |
| 11276 |
MJ3000 |
60V silicon epitaxial-base darlington |
Comset Semiconductors |
| 11277 |
MJ3000 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 11278 |
MJ3001 |
80V silicon epitaxial-base darlington |
Comset Semiconductors |
| 11279 |
MJ3001 |
Silicon epitaxial-base power NPN transistor in monolithic Darlington configuration |
SGS-ATES |
| 11280 |
MJ900 |
Silicon epitaxial-base power PNP transistor in monolithic Darlington configuration |
SGS-ATES |
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