No. |
Part Name |
Description |
Manufacturer |
11341 |
MJE200TSTU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11342 |
MJE210 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11343 |
MJE210 |
-40 V, -5 A, PNP epitaxial silicon transistor |
Samsung Electronic |
11344 |
MJE210STU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11345 |
MJE2955T |
SILICON EPITAXIAL PLANAR TRANSISTOR |
Wing Shing Computer Components |
11346 |
MJE3055 |
SILICON EPITAXIAL PLANAR TRANSISTOR |
Wing Shing Computer Components |
11347 |
MJE3055T |
SILICON EPITAXIAL PLANAR TRANSISTOR |
Wing Shing Computer Components |
11348 |
MJE340 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11349 |
MJE340 |
300 V, 500 A, NPN epitaxial silicon transistor |
Samsung Electronic |
11350 |
MJE340STU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11351 |
MJE350 |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11352 |
MJE350 |
-300 V, -500 A, PNP epitaxial silicon transistor |
Samsung Electronic |
11353 |
MJE350STU |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11354 |
MJE370 |
PNP Epitaxial Power Transistor |
National Semiconductor |
11355 |
MJE371 |
PNP Epitaxial Power Transistor |
National Semiconductor |
11356 |
MJE520 |
NPN Epitaxial Power Transistor |
National Semiconductor |
11357 |
MJE521 |
NPN Epitaxial Power Transistor |
National Semiconductor |
11358 |
MJE700 |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11359 |
MJE700 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
11360 |
MJE700 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
11361 |
MJE700STU |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11362 |
MJE701 |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11363 |
MJE701 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
11364 |
MJE701 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
11365 |
MJE701STU |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11366 |
MJE702 |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11367 |
MJE702 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
11368 |
MJE702 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
11369 |
MJE702STU |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11370 |
MJE703 |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
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