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Datasheets for EPITAXIA

Datasheets found :: 14318
Page: | 376 | 377 | 378 | 379 | 380 | 381 | 382 | 383 | 384 |
No. Part Name Description Manufacturer
11371 MJE703 -60 V, -4 A, NPN epitaxial silicon darlington transistor Samsung Electronic
11372 MJE703 Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration SGS-ATES
11373 MJE703STU PNP Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11374 MJE800 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11375 MJE800 60 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
11376 MJE800 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
11377 MJE800STU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11378 MJE801 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11379 MJE801 60 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
11380 MJE801 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
11381 MJE801STU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11382 MJE802 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11383 MJE802 60 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
11384 MJE802 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
11385 MJE802STU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11386 MJE803 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11387 MJE803 60 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
11388 MJE803 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
11389 MJE803STU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11390 MM2483 NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case Motorola
11391 MM2484 NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case Motorola
11392 MM3000 NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 100V Motorola
11393 MM3001 NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 150V Motorola
11394 MM3002 NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 200V Motorola
11395 MM3003 NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 250V Motorola
11396 MMBA811C6 PNP EPITAXIAL SILICON TRANSISTOR Samsung Electronic
11397 MMBA812M6 PNP EPITAXIAL PLANAR TRANSISTOR(General Purpose Transistor) Samsung Electronic
11398 MMBC1622D8 40 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
11399 MMBC1623L6 50 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
11400 MMBD4148 350mW 100 Volt Silicon Epitaxial Diode Micro Commercial Components


Datasheets found :: 14318
Page: | 376 | 377 | 378 | 379 | 380 | 381 | 382 | 383 | 384 |



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