No. |
Part Name |
Description |
Manufacturer |
11911 |
MJE371 |
PNP Epitaxial Power Transistor |
National Semiconductor |
11912 |
MJE520 |
NPN Epitaxial Power Transistor |
National Semiconductor |
11913 |
MJE521 |
NPN Epitaxial Power Transistor |
National Semiconductor |
11914 |
MJE700 |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11915 |
MJE700 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
11916 |
MJE700 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
11917 |
MJE700STU |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11918 |
MJE701 |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11919 |
MJE701 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
11920 |
MJE701 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
11921 |
MJE701STU |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11922 |
MJE702 |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11923 |
MJE702 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
11924 |
MJE702 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
11925 |
MJE702STU |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11926 |
MJE703 |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11927 |
MJE703 |
-60 V, -4 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
11928 |
MJE703 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
11929 |
MJE703STU |
PNP Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11930 |
MJE800 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11931 |
MJE800 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
11932 |
MJE800 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
11933 |
MJE800STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11934 |
MJE801 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11935 |
MJE801 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
11936 |
MJE801 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
11937 |
MJE801STU |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11938 |
MJE802 |
NPN Epitaxial Silicon Darlington Transistor |
Fairchild Semiconductor |
11939 |
MJE802 |
60 V, 5 A, NPN epitaxial silicon darlington transistor |
Samsung Electronic |
11940 |
MJE802 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
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