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Datasheets for TAX

Datasheets found :: 15071
Page: | 394 | 395 | 396 | 397 | 398 | 399 | 400 | 401 | 402 |
No. Part Name Description Manufacturer
11911 MJE371 PNP Epitaxial Power Transistor National Semiconductor
11912 MJE520 NPN Epitaxial Power Transistor National Semiconductor
11913 MJE521 NPN Epitaxial Power Transistor National Semiconductor
11914 MJE700 PNP Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11915 MJE700 -60 V, -4 A, NPN epitaxial silicon darlington transistor Samsung Electronic
11916 MJE700 Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration SGS-ATES
11917 MJE700STU PNP Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11918 MJE701 PNP Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11919 MJE701 -60 V, -4 A, NPN epitaxial silicon darlington transistor Samsung Electronic
11920 MJE701 Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration SGS-ATES
11921 MJE701STU PNP Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11922 MJE702 PNP Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11923 MJE702 -60 V, -4 A, NPN epitaxial silicon darlington transistor Samsung Electronic
11924 MJE702 Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration SGS-ATES
11925 MJE702STU PNP Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11926 MJE703 PNP Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11927 MJE703 -60 V, -4 A, NPN epitaxial silicon darlington transistor Samsung Electronic
11928 MJE703 Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration SGS-ATES
11929 MJE703STU PNP Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11930 MJE800 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11931 MJE800 60 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
11932 MJE800 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
11933 MJE800STU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11934 MJE801 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11935 MJE801 60 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
11936 MJE801 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
11937 MJE801STU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11938 MJE802 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11939 MJE802 60 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
11940 MJE802 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES


Datasheets found :: 15071
Page: | 394 | 395 | 396 | 397 | 398 | 399 | 400 | 401 | 402 |



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