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Datasheets for TAX

Datasheets found :: 15071
Page: | 395 | 396 | 397 | 398 | 399 | 400 | 401 | 402 | 403 |
No. Part Name Description Manufacturer
11941 MJE802STU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11942 MJE803 NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11943 MJE803 60 V, 5 A, NPN epitaxial silicon darlington transistor Samsung Electronic
11944 MJE803 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
11945 MJE803STU NPN Epitaxial Silicon Darlington Transistor Fairchild Semiconductor
11946 MM2483 NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case Motorola
11947 MM2484 NPN silicon epitaxial transistor designed for low-level, low-noise amplifier applications, collector connected to case Motorola
11948 MM3000 NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 100V Motorola
11949 MM3001 NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 150V Motorola
11950 MM3002 NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 200V Motorola
11951 MM3003 NPN silicon epitaxial transistor, designed for general-purpose, high-voltage applications 250V Motorola
11952 MMBA811C6 PNP EPITAXIAL SILICON TRANSISTOR Samsung Electronic
11953 MMBA812M6 PNP EPITAXIAL PLANAR TRANSISTOR(General Purpose Transistor) Samsung Electronic
11954 MMBC1622D8 40 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
11955 MMBC1623L6 50 V, 100 mA, NPN epitaxial silicon transistor Samsung Electronic
11956 MMBD4148 350mW 100 Volt Silicon Epitaxial Diode Micro Commercial Components
11957 MMBD914 350mW 100 Volt Silicon Epitaxial Diode Micro Commercial Components
11958 MMBT2222 60 V, 600 mA, NPN epitaxial silicon transistor Samsung Electronic
11959 MMBT2222A NPN Epitaxial Silicon Transistor, SOT-23 case marking 1P Samsung Electronic
11960 MMBT2222AT NPN Epitaxial Silicon Transistor Fairchild Semiconductor
11961 MMBT2484 NPN Epitaxial Silicon Transistor, SOT-23 case, marking 1U Samsung Electronic
11962 MMBT2907 60 V, 600 mA, PNP epitaxial silicon transistor Samsung Electronic
11963 MMBT2907A PNP Epitaxial Silicon Transistor, marking 2F Samsung Electronic
11964 MMBT3904 NPN Epitaxial Silicon Transistor, SOT-23 case marking 1A Samsung Electronic
11965 MMBT3904SL NPN Epitaxial Silicon Transistor Fairchild Semiconductor
11966 MMBT3904T NPN Epitaxial Silicon Transistor Fairchild Semiconductor
11967 MMBT3906 PNP Epitaxial Silicon Transistor, SOT-23 case marking 2A Samsung Electronic
11968 MMBT3906SL PNP Epitaxial Silicon Transistor Fairchild Semiconductor
11969 MMBT3906T PNP Epitaxial Silicon Transistor Fairchild Semiconductor
11970 MMBT4124 30 V, 200 mA, NPN epitaxial silicon transistor Samsung Electronic


Datasheets found :: 15071
Page: | 395 | 396 | 397 | 398 | 399 | 400 | 401 | 402 | 403 |



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