No. |
Part Name |
Description |
Manufacturer |
11971 |
MMBT4126 |
-25 V, -200 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
11972 |
MMBT4401 |
NPN Epitaxial Silicon Transistor, SOT-23 case marking 2X |
Samsung Electronic |
11973 |
MMBT4403 |
PNP Epitaxial Silicon Transistor, SOT-23 case marking 2T |
Samsung Electronic |
11974 |
MMBT5087 |
50 V, 50 mA, PNP epitaxial silicon transistor |
Samsung Electronic |
11975 |
MMBT5088 |
35 V, 50 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
11976 |
MMBT5089 |
30 V, 50 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
11977 |
MMBT5401 |
PNP Epitaxial Silicon Transistor, SOT-23 case marking 2L |
Samsung Electronic |
11978 |
MMBT5550 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
11979 |
MMBT5550 |
160 V, 600 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
11980 |
MMBT6427 |
40 V, 500 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
11981 |
MMBT6428 |
60 V, 200 mA, NPN epitaxial silicon transistor |
Samsung Electronic |
11982 |
MMBTA05 |
NPN Epitaxial Silicon Transistor, SOT-23 case, marking 1H |
Samsung Electronic |
11983 |
MMBTA06 |
NPN Epitaxial Silicon Transistor, case SOT-23 marking 1G |
Samsung Electronic |
11984 |
MMBTA13 |
NPN Epitaxial Silicon Transistor, marking 1M |
Samsung Electronic |
11985 |
MMBTA14 |
NPN Epitaxial Silicon Transistor, marking 1N |
Samsung Electronic |
11986 |
MMBTA20 |
NPN Epitaxial Silicon Transistor, marking 1C |
Samsung Electronic |
11987 |
MMBTA42 |
NPN Epitaxial Silicon Transistor, marking 1D |
Samsung Electronic |
11988 |
MMBTA43 |
NPN Epitaxial Silicon Transistor, SOT-23 case marking with 1E |
Samsung Electronic |
11989 |
MMBTA55 |
PNP Epitaxial Silicon Transistor, marking 2H |
Samsung Electronic |
11990 |
MMBTA56 |
PNP Epitaxial Silicon Transistor, marking 2G |
Samsung Electronic |
11991 |
MMBTA63 |
PNP Epitaxial Silicon Transistor, marking 2U |
Samsung Electronic |
11992 |
MMBTA64 |
PNP Epitaxial Silicon Transistor, marking 2V |
Samsung Electronic |
11993 |
MMBTA92 |
PNP Epitaxial Silicon Transistor, marking 2D |
Samsung Electronic |
11994 |
MMBTA93 |
PNP Epitaxial Silicon Transistor, marking 2E |
Samsung Electronic |
11995 |
MMBTH10 |
NPN Epitaxial Silicon Transistor, marking 3E |
Samsung Electronic |
11996 |
MMBTH24 |
NPN Epitaxial Silicon Transistor, marking 3A |
Samsung Electronic |
11997 |
MMD6050 |
Silicon epitaxial micro-miniature switching diodes - single, series and dual diodes designed for general-purpose, high-speed switching applications |
Motorola |
11998 |
MMD6100 |
Silicon epitaxial micro-miniature switching diodes - single, series and dual diodes designed for general-purpose, high-speed switching applications |
Motorola |
11999 |
MMD6150 |
Silicon epitaxial micro-miniature switching diodes - single, series and dual diodes designed for general-purpose, high-speed switching applications |
Motorola |
12000 |
MMD70 |
Micro-Miniature Silicon Epitaxial Switching Diode |
Motorola |
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