No. |
Part Name |
Description |
Manufacturer |
1201 |
2N5880 |
PNP silicon power transistor 160W |
National Semiconductor |
1202 |
2N5881 |
NPN silicon power transistor 160W |
National Semiconductor |
1203 |
2N5882 |
NPN silicon power transistor 160W |
National Semiconductor |
1204 |
2N5943 |
Trans GP BJT NPN 16V 2A |
New Jersey Semiconductor |
1205 |
2N5945 |
Trans GP BJT NPN 16V 2A |
New Jersey Semiconductor |
1206 |
2N6029 |
Trans GP BJT PNP 100V 16A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
1207 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
1208 |
2N6030 |
Trans GP BJT PNP 120V 16A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
1209 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
1210 |
2N6031 |
Trans GP BJT PNP 140V 16A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
1211 |
2N6266 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
1212 |
2N6267 |
10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note |
RCA Solid State |
1213 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
1214 |
2N6282 |
Darlington 20A complementary silicon 160W power NPN transistor |
Motorola |
1215 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
1216 |
2N6283 |
Darlington 20A complementary silicon 160W power NPN transistor |
Motorola |
1217 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
1218 |
2N6284 |
Darlington 20A complementary silicon 160W power NPN transistor |
Motorola |
1219 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
1220 |
2N6285 |
Darlington 20A complementary silicon 160W power PNP transistor |
Motorola |
1221 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
1222 |
2N6286 |
Darlington 20A complementary silicon 160W power PNP transistor |
Motorola |
1223 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
1224 |
2N6287 |
Darlington 20A complementary silicon 160W power PNP transistor |
Motorola |
1225 |
2N6400 |
SCRs 16 Ampere RMS, 50V |
Motorola |
1226 |
2N6400 |
Thyristor SCR 50V 160A 3-Pin(3+Tab) TO-220AB Box |
New Jersey Semiconductor |
1227 |
2N6400 |
Thyristor, 16 amperes, 50 volt |
Teccor Electronics |
1228 |
2N6401 |
SCRs 16 Ampere RMS, 100V |
Motorola |
1229 |
2N6401 |
Silicon Controlled Rectifier 16A 100V |
ON Semiconductor |
1230 |
2N6401 |
Thyristor, 16 amperes, 100 volt |
Teccor Electronics |
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