| No. |
Part Name |
Description |
Manufacturer |
| 1321 |
30KPA168C |
Diode TVS Single Bi-Dir 168V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 1322 |
30KPA168CA |
Diode TVS Single Bi-Dir 168V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 1323 |
350PJT160 |
V(rrm/drm): 1600V; 1200A I(tgq) gate turn-off hockey puk SCR |
International Rectifier |
| 1324 |
3B01 |
3B Series 16 Channel Backplane |
Analog Devices |
| 1325 |
3EZ160D |
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
| 1326 |
3EZ160D1 |
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
| 1327 |
3EZ160D1 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 1% tolerance. |
Motorola |
| 1328 |
3EZ160D10 |
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
| 1329 |
3EZ160D10 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 10% tolerance. |
Motorola |
| 1330 |
3EZ160D2 |
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
| 1331 |
3EZ160D2 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. 2% tolerance. |
Motorola |
| 1332 |
3EZ160D3 |
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
| 1333 |
3EZ160D4 |
3 W, silicon zener diode. Nominal voltage 160 V, current 4.7 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
| 1334 |
3EZ160D5 |
3 watt Surmetic 30 silicon zener diode. Nom zener voltage 160 V. |
Motorola |
| 1335 |
3EZ16D2 |
Diode Zener Single 16V 2% 3W 2-Pin DO-41 |
New Jersey Semiconductor |
| 1336 |
3EZ16D5 |
Diode Zener Single 16V 5% 3W 2-Pin DO-41 |
New Jersey Semiconductor |
| 1337 |
3VR16 |
3 Watt Epoxy Silicon Zener Diode 16V |
Transitron Electronic |
| 1338 |
41C16257 |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
Integrated Silicon Solution Inc |
| 1339 |
42S16400A |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
Integrated Silicon Solution Inc |
| 1340 |
4X16E43V |
4 MEG x 16 EDO DRAM |
etc |
| 1341 |
4X16E83V |
4 MEG x 16 EDO DRAM |
etc |
| 1342 |
4X16E83VTW-6 |
4 MEG x 16 EDO DRAM |
etc |
| 1343 |
50S116T |
512K x 2 Banks x 16 BITS SDRAM |
Ceramate |
| 1344 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 1345 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 1346 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 1347 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 1348 |
54154 |
4-Line to 16-Line Decoder/Demultiplexer |
National Semiconductor |
| 1349 |
54154DMQB |
4-Line to 16-Line Decoders/Demultiplexers |
National Semiconductor |
| 1350 |
54154FMQB |
4-Line to 16-Line Decoders/Demultiplexers |
National Semiconductor |
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