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Datasheets for 16

Datasheets found :: 61370
Page: | 39 | 40 | 41 | 42 | 43 | 44 | 45 | 46 | 47 |
No. Part Name Description Manufacturer
1261 2SA1217 Trans GP BJT PNP 160V 15A 3-Pin MT-200 New Jersey Semiconductor
1262 2SA1249 Trans GP BJT PNP 160V 1.5A 3-Pin TO-126 New Jersey Semiconductor
1263 2SA1444 Trans GP BJT PNP 160V 1.5A 4-Pin(3+Tab) PCP New Jersey Semiconductor
1264 2SA1477 PNP Epitaxial Planar Silicon Transistors 160V/140mA Switching Applications SANYO
1265 2SA1507 PNP Epitaxial Planar Silicon Transistors 160V/1.5A Switching Applications SANYO
1266 2SA1942 Trans GP BJT PNP 160V 12A 3-Pin(3+Tab) TO-3PL New Jersey Semiconductor
1267 2SA1964 Trans GP BJT PNP 160V 1.5A 3-Pin(3+Tab) TO-220FP New Jersey Semiconductor
1268 2SB1477 Trans GP BJT PNP 16V 0.5A 3-Pin SC-70 New Jersey Semiconductor
1269 2SB1478 Trans GP BJT PNP 16V 0.5A 3-Pin SC-70 New Jersey Semiconductor
1270 2SC1009 High voltage amplifier. Collector-base voltage Vcbo = 160V. Collector-emitter voltage Vceo = 140V. Emitter-base voltage Vebo = 8V. Collector dissipation Pc(max) = 800mW. Collector current Ic = 700mA. USHA India LTD
1271 2SC2911 NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver Applications SANYO
1272 2SC3116 NPN Epitaxial Planar Silicon Transistors 160V/700mA Switching Applications SANYO
1273 2SC3117 NPN Epitaxial Planar Silicon Transistors 160V/1.5A Switching Applications SANYO
1274 2SC313 Trans GP BJT NPN 160V 0.7A 3-Pin TO-126 New Jersey Semiconductor
1275 2SC3242 900mW Lead frame NPN transistor, maximum rating: 16V Vceo, 2A Ic, 150 to 800 hFE. Complementary 2SA1282 Isahaya Electronics Corporation
1276 2SC3787 NPN Epitaxial Planar Silicon Transistors 160V/140mA Switching Applications SANYO
1277 2SF431 Silicon-controlled rectifiers 16A TOSHIBA
1278 2SF432 Silicon-controlled rectifiers 16A TOSHIBA
1279 2SF55 Silicon-controlled rectifiers 16A TOSHIBA
1280 2SF56 Silicon-controlled rectifiers 16A TOSHIBA
1281 2SF57 Silicon-controlled rectifiers 16A TOSHIBA
1282 2SF58 Silicon-controlled rectifiers 16A TOSHIBA
1283 2SF59 Silicon-controlled rectifiers 16A TOSHIBA
1284 2SF60 Silicon-controlled rectifiers 16A TOSHIBA
1285 2SF61 Silicon-controlled rectifiers 16A TOSHIBA
1286 2SF62 Silicon-controlled rectifiers 16A TOSHIBA
1287 2SK4085LS N-Channel Power MOSFET, 500V, 16A, 430mOhm, TO-220F-3FS ON Semiconductor
1288 2V010 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 18 V @ 1mA DC test current. NTE Electronics
1289 2V014 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 22 V @ 1mA DC test current. NTE Electronics
1290 2V015 Metal oxide varistor. Case diameter 16 mm. Nominal varistor voltage 24 V @ 1mA DC test current. NTE Electronics


Datasheets found :: 61370
Page: | 39 | 40 | 41 | 42 | 43 | 44 | 45 | 46 | 47 |



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