No. |
Part Name |
Description |
Manufacturer |
121 |
KBPC6005 |
Single phase glass bridge rectifier. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 6.0 A. |
Chenyi Electronics |
122 |
KBPC8005 |
Single phase silicon bridge rectifier. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 8.0 A. |
Chenyi Electronics |
123 |
LBSS84LT |
Power MOSFET 130m Amps, 50 Volts (P-Channel SOT -23) |
Leshan Radio Company |
124 |
LBSS84LT1 |
Power MOSFET 130m Amps, 50 Volts (P-Channel SOT -23) |
Leshan Radio Company |
125 |
MAX5491RA02000-T |
Resistor ratio accuracy: 0.035% MAX, 50 V, 30 kom precision-matched resistor-divider in SOT23 |
MAXIM - Dallas Semiconductor |
126 |
MAX5491RB02000-T |
Resistor ratio accuracy: 0.05% MAX, 50 V, 30 kom precision-matched resistor-divider in SOT23 |
MAXIM - Dallas Semiconductor |
127 |
MAX5491RC02000-T |
Resistor ratio accuracy: 0.1% MAX, 50 V, 30 kom precision-matched resistor-divider in SOT23 |
MAXIM - Dallas Semiconductor |
128 |
MAX5491TC05000-T |
Resistor ratio accuracy: 0.1% MAX, 50 V, 30 kom precision-matched resistor-divider in SOT23 |
MAXIM - Dallas Semiconductor |
129 |
MB1005 |
10 A high current bridge rectifier. Max reccurent peak reverse voltage 50 V. |
Comchip Technology |
130 |
MB1505 |
15 A high current bridge rectifier. Max reccurent peak reverse voltage 50 V. |
Comchip Technology |
131 |
MB2505 |
25 A high current bridge rectifier. Max reccurent peak reverse voltage 50 V. |
Comchip Technology |
132 |
MB3505 |
35 A high current bridge rectifier. Max reccurent peak reverse voltage 50 V. |
Comchip Technology |
133 |
MB5005 |
50 A high current bridge rectifier. Max reccurent peak reverse voltage 50 V. |
Comchip Technology |
134 |
MCR264-2 |
Thyristor. Silicon controlled rectifier. 40 A RMS. Peak reverse blocking voltage 50 V. |
Motorola |
135 |
MCR3818-2 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 50 V. |
Motorola |
136 |
MCR3835-2 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 35 A RMS. Peak repetitive forward and reverse blocking voltage 50 V. |
Motorola |
137 |
MCR3918-2 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Peak repetitive forward and reverse voltage 50 V. |
Motorola |
138 |
MCR3935-2 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 35 A RMS. Peak repetitive forward and reverse blocking voltage 50 V. |
Motorola |
139 |
MCR80-0.5 |
THYRISTOR 80 AMPERES RMS, 50 VOLTS |
Motorola |
140 |
MCR81-0.5 |
THYRISTOR 80 AMPERES RMS, 50 VOLTS |
Motorola |
141 |
MCR82-0.5 |
THYRISTOR 80 AMPERES RMS, 50 VOLTS |
Motorola |
142 |
MDS800 |
800 W, 50 V, 1090 MHz common base transistor |
GHz Technology |
143 |
MMDF1N05E |
DUAL TMOS MOSFET 50 VOLTS 1.5 AMPERE RDS(on) = 0.30 OHM |
Motorola |
144 |
MMDF1N05E |
Power MOSFET 1 Amp, 50 Volts |
ON Semiconductor |
145 |
MMDF1N05E-D |
Power MOSFET 1 Amp, 50 Volts N-Channel SO-8, Dual |
ON Semiconductor |
146 |
MMDF1N05ER2 |
Power MOSFET 1 Amp, 50 Volts |
ON Semiconductor |
147 |
MMDF2N05ZR2 |
DUAL TMOS POWER MOSFET 2.0 AMPERES 50 VOLTS |
Motorola |
148 |
MMDF2N05ZR2 |
Power MOSFET 2 Amps, 50 Volts |
ON Semiconductor |
149 |
MMDF2N05ZR2-D |
Power MOSFET 2 Amps, 50 Volts N-Channel SO-8, Dual |
ON Semiconductor |
150 |
MRF151G |
300 W, 50 V, N-channel broadband RF power MOSFET |
MA-Com |
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