No. |
Part Name |
Description |
Manufacturer |
61 |
BSS84LT1G |
Power MOSFET 130 mAmps, 50 Volts |
ON Semiconductor |
62 |
BSV52LT1-D |
Power MOSFET 200 mAmps, 50 Volts N-Channel SOT-23 |
ON Semiconductor |
63 |
C122F |
Silicon controlled rectifier. Reverse blocking triode thyristor. 8 A RMS. Repetitive peak off-state voltage and repetitive peak reverse voltage 50 V. |
Motorola |
64 |
C122F |
Thyristor, 8 amperes, 50 volt |
Teccor Electronics |
65 |
C230F |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 50 V. |
Motorola |
66 |
C230F3 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 50 V. |
Motorola |
67 |
C231F |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 50 V. |
Motorola |
68 |
C231F3 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 50 V. |
Motorola |
69 |
C232F |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 50 V. |
Motorola |
70 |
C233F |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 50 V. |
Motorola |
71 |
CDBD1550A |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 50 V. Common anode. |
Comchip Technology |
72 |
CDBD1550C |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 50 V. Common cathod. |
Comchip Technology |
73 |
CDBD1550D |
15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 50 V. Double. |
Comchip Technology |
74 |
D5001R803R3P |
10W Total Output Power 50 Vin +1.8, +3.3 Vout Dual DC-DC Rad-Tolerant Converter in a D Package. |
International Rectifier |
75 |
D5001R803R3PA |
10W Total Output Power 50 Vin +1.8, +3.3 Vout Dual DC-DC Rad-Tolerant Converter in a D Package. |
International Rectifier |
76 |
DME150 |
150 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
77 |
DME150 |
150 W, 50 V, 1025-1150 MHz common base transistor |
GHz Technology |
78 |
DME150-2 |
150 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
79 |
DME150-3 |
150 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
80 |
DME375 |
375 W, 50 V internally matched, common base transistor |
Acrian |
81 |
DME375A |
375 W, 50 V internally matched, common base transistor |
Acrian |
82 |
DME375A |
375 W, 50 V, 1025-1150 MHz common base transistor |
GHz Technology |
83 |
DME375A-2 |
375 W, 50 V internally matched, common base transistor |
Acrian |
84 |
DME375A-3 |
375 W, 50 V internally matched, common base transistor |
Acrian |
85 |
DME500 |
500 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
86 |
DME500 |
500 W, 50 V, 1025-1150 MHz common base transistor |
GHz Technology |
87 |
DME500-2 |
500 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
88 |
DME500-3 |
500 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
89 |
DMEG250 |
250 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
90 |
DMEG250 |
250 W, 50 V, 960-1215 MHz common base transistor |
GHz Technology |
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