| No. |
Part Name |
Description |
Manufacturer |
| 91 |
DMEG250-2 |
250 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
| 92 |
DMEG250-3 |
250 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip |
Acrian |
| 93 |
FDLL3064 |
Ultra fast low capacitance diode. Working inverse voltage 50 V. |
Fairchild Semiconductor |
| 94 |
FDLL3600 |
High conductance ultra fast diode. Working inverse voltage 50 V. |
Fairchild Semiconductor |
| 95 |
FDLL4153 |
High speed diode. Working inverse voltage 50 V. |
Fairchild Semiconductor |
| 96 |
FDLL4305 |
Ultra fast low capacitance diode. Working inverse voltage 50 V. |
Fairchild Semiconductor |
| 97 |
FDLL4454 |
Ultra fast low capacitance diode. Working inverse voltage 50 V. |
Fairchild Semiconductor |
| 98 |
FDLL920 |
General purpose diode. Working inverse voltage 50 V. |
Fairchild Semiconductor |
| 99 |
FMP20N05 |
N-Channel Power MOSFETs/ 18-20 A/ 50 V |
Fairchild Semiconductor |
| 100 |
FST12040 |
200 Amp Rectifier 35 to 50 Volts Schottky Barrier |
Micro Commercial Components |
| 101 |
FST12045 |
200 Amp Rectifier 35 to 50 Volts Schottky Barrier |
Micro Commercial Components |
| 102 |
FST12050 |
200 Amp Rectifier 35 to 50 Volts Schottky Barrier |
Micro Commercial Components |
| 103 |
FST19035 |
200 Amp Rectifier 35 to 50 Volts Schottky Barrier |
Micro Commercial Components |
| 104 |
GBP005 |
Single phase glass passivated bridge rectifier. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 2.0 A. |
Chenyi Electronics |
| 105 |
GBPC35005W |
Single phase glass passivated bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
| 106 |
HER1601A |
High efficiency rectifier. Negative CT. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 16.0 A. |
Bytes |
| 107 |
HER1601C |
High efficiency rectifier. Positive CT. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 16.0 A. |
Bytes |
| 108 |
HER801R |
High efficiency rectifier. Case negative. Maximum recurrent peak reverse voltage 50 V. Maximum average forward rectified current 8.0 A. |
Bytes |
| 109 |
ITC1000 |
1000 W, 50 V, 1030 MHz common base transistor |
GHz Technology |
| 110 |
ITC1100 |
1100 W, 50 V, 1030 MHz common base transistor |
GHz Technology |
| 111 |
KBP005 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 2.0 A. |
Shanghai Sunrise Electronics |
| 112 |
KBPC10005 |
10 A high current bridge rectifier. Max reccurent peak reverse voltage 50 V. |
Comchip Technology |
| 113 |
KBPC10005 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 10.0 A. |
Shanghai Sunrise Electronics |
| 114 |
KBPC15005 |
15 A high current bridge rectifier. Max reccurent peak reverse voltage 50 V. |
Comchip Technology |
| 115 |
KBPC15005W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 15 A. |
Shanghai Sunrise Electronics |
| 116 |
KBPC25005 |
25 A high current bridge rectifier. Max reccurent peak reverse voltage 50 V. |
Comchip Technology |
| 117 |
KBPC25005W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 25 A. |
Shanghai Sunrise Electronics |
| 118 |
KBPC35005 |
35 A high current bridge rectifier. Max reccurent peak reverse voltage 50 V. |
Comchip Technology |
| 119 |
KBPC35005W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
| 120 |
KBPC50005 |
50 A high current bridge rectifier. Max reccurent peak reverse voltage 50 V. |
Comchip Technology |
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