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Datasheets for BASE

Datasheets found :: 9123
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No. Part Name Description Manufacturer
121 4N38 Optocoupler, Phototransistor Output, With Base Connection Vishay
122 56-218 Fastening kit for transistors with TO-5 and TO-39 housings with an all-metal base VALVO
123 7013 CMOS TIA IS-54 Baseband Receive Port Analog Devices
124 80610-18 High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz SGS Thomson Microelectronics
125 80610-50 High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz SGS Thomson Microelectronics
126 81406 28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band SGS Thomson Microelectronics
127 81410 28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band SGS Thomson Microelectronics
128 81416-012 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
129 81416-20 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
130 81416-6 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
131 82022-20 Common base NPN silicon power transistor for telemetry applications SGS Thomson Microelectronics
132 82223-12 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
133 82223-18 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
134 82223-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
135 82223-4 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
136 82324-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
137 82327-15 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
138 82327-4 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
139 82327-6 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
140 854550-1 69.99 MHz SAW Bandpass Filter for CDMA Basestation Receiver Applications Part Number 854550-1 etc
141 856059 3G Basestation SAW Filter TriQuint Semiconductor
142 AB-020 BURR-BROWN SPICE BASED MACROMODELS, REV. F Burr Brown
143 ABC900-30E Linear Power Amplifier 30W 890-960MHz, specifically designed for cellular radio base station applications Motorola
144 ABC900-30U Linear Power Amplifier 30W 870-896MHz, specifically designed for cellular radio base station applications Motorola
145 ABC900-60E Linear Power Amplifier 30W 890-960MHz, specifically designed for cellular radio base station applications Motorola
146 AC101-TF 10/100 BASE - TX SINGLE-CHANNEL ALTI PHY TRANSCEIVER etc
147 AC101L-PB01-R 10 / 100 BASE-TX SINGLE-PHY TRANSCEIVER etc
148 ACTF070013 70 MHz Standard Filter FOR base Station application etc
149 ACTF070013-PK10 70 MHz Standard Filter FOR base Station application etc
150 AD20MSP410 GSM Baseband Processing Chipset Analog Devices


Datasheets found :: 9123
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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