No. |
Part Name |
Description |
Manufacturer |
61 |
20PMT03 |
10/100 Base TX Transformer Designed for general Chipsets |
YCL |
62 |
2124-12L |
12 W, 22 V, 2200-2400 MHz common base transistor |
GHz Technology |
63 |
2223-1.7 |
1.7 W, 24 V, 2200-2300 MHz common base transistor |
GHz Technology |
64 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
65 |
2223-9A |
9 W, 24 V, 2200-2300 MHz common base transistor |
GHz Technology |
66 |
2224-12L |
12 W, 22 V, 2200-2400 MHz common base transistor |
GHz Technology |
67 |
2225-4L |
3.5 W, 24 V, 2200-2500 MHz common base transistor |
GHz Technology |
68 |
2304 |
4 W, 20 V, 2300 MHz common base transistor |
GHz Technology |
69 |
2307 |
7 W, 20 V, 2300 MHz common base transistor |
GHz Technology |
70 |
2324-12L |
12 W, 20 V, 2300-2400 MHz common base transistor |
GHz Technology |
71 |
2324-20 |
20 W, 24 V, 2300-2400 MHz common base transistor |
GHz Technology |
72 |
2324-5 |
5 W, 24 V, 2300-2400 MHz common base transistor |
GHz Technology |
73 |
2425-25 |
25 W, 24 V, 2410-2470 MHz common base transistor |
GHz Technology |
74 |
2N3792 |
PNP SILICON EPITAXIAL BASE POWER TANSISTORS |
SemeLAB |
75 |
2N4898X |
PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR |
SemeLAB |
76 |
2N4899X |
PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR |
SemeLAB |
77 |
2N4900X |
PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR |
SemeLAB |
78 |
2N4901 |
PNP silicon transistor, epitaxial base |
Comset Semiconductors |
79 |
2N4902 |
PNP silicon transistor, epitaxial base |
Comset Semiconductors |
80 |
2N4903 |
PNP silicon transistor, epitaxial base |
Comset Semiconductors |
81 |
2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE |
SemeLAB |
82 |
2SA1060 |
Silicon PNP epitaxial base mesa transistor, 80V, 5A |
Panasonic |
83 |
2SA1061 |
SILICON EPITAXAL BASE LESA TRANSISTOR |
Panasonic |
84 |
2SA1062 |
SILICON EPITAXAL BASE LESA TRANSISTOR |
Panasonic |
85 |
2SA814 |
SILICON PNP EPITAXIAL BASE MESA TYPE |
TOSHIBA |
86 |
2SA815 |
SILICON PNP EPITAXIAL BASE MESA TYPE |
TOSHIBA |
87 |
2SB468 |
Germanium Transistor PNP Diffused Base Alloyed Emitter, intended for use in TV Horizontal Deflection Power Output |
Hitachi Semiconductor |
88 |
2SB468 |
GERMANIUM PNP DIFFUSED BASE ALLOYED EMITTER |
Unknow |
89 |
2SB713 |
SILICON EPITAXAL BASE MESA TRANSISTOR |
Panasonic |
90 |
2SC2484 |
Silicon NPN epitaxial base mesa transistor, 80V, 5A |
Panasonic |
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