No. |
Part Name |
Description |
Manufacturer |
91 |
2SC2485 |
SILICON EPITAXAL BASE LESA TRANSISTOR |
Panasonic |
92 |
2SC2486 |
SILICON EPITAXAL BASE LESA TRANSISTOR |
Panasonic |
93 |
2SC3121 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base) |
TOSHIBA |
94 |
2SC3121 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base) |
TOSHIBA |
95 |
2SC4246 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base) |
TOSHIBA |
96 |
2SC4246 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base) |
TOSHIBA |
97 |
2SC4527 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base) |
TOSHIBA |
98 |
2SC4527 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base) |
TOSHIBA |
99 |
2SD1391 |
RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS |
ST Microelectronics |
100 |
2SD751 |
SILICON EPITAXAL BASE MESA TRANSISTOR |
Panasonic |
101 |
2SD751 |
SILICON EPITAXAL BASE MESA TRANSISTOR |
Panasonic |
102 |
2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
NEC |
103 |
3000 |
Silicon NPN common base transistor, high gain and efficiency, output power at frequencyes up to 3500MHz |
SGS Thomson Microelectronics |
104 |
3001 |
1 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
105 |
3003 |
3 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
106 |
3005 |
5 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
107 |
4000 |
Common base silicon NPN microwave power transistor featuring a unique Microgrid™ structure |
SGS Thomson Microelectronics |
108 |
4001 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
109 |
4003 |
Common base silicon NPN microwave power transistor designed for Class C amplifier applications in the 2.0-4.4GHz |
SGS Thomson Microelectronics |
110 |
40ST1041A |
40 PIN SMD ETHERNET 10/100 BASE QUAD PORT TRANSFORMER |
Unknow |
111 |
485ELC |
Max voltage:20V; 250mA; high speed ethernet data line protector. For ethernet- 10/100 base T, catagory 5 systems, RS-485 serial communication lines, ISDN equipment/systems, video transmission systems |
Protek Devices |
112 |
4N25 |
Optocoupler, Phototransistor Output, With Base Connection |
Vishay |
113 |
4N26 |
Optocoupler, Phototransistor Output, With Base Connection |
Vishay |
114 |
4N27 |
Optocoupler, Phototransistor Output, With Base Connection |
Vishay |
115 |
4N28 |
Optocoupler, Phototransistor Output, With Base Connection |
Vishay |
116 |
4N32 |
Optocoupler, Photodarlington Output, High Gain, With Base Connection |
Vishay |
117 |
4N33 |
Optocoupler, Photodarlington Output, High Gain, With Base Connection |
Vishay |
118 |
4N35 |
Optocoupler, Phototransistor Output, With Base Connection |
Vishay |
119 |
4N36 |
Optocoupler, Phototransistor Output, With Base Connection |
Vishay |
120 |
4N37 |
Optocoupler, Phototransistor Output, With Base Connection |
Vishay |
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