No. |
Part Name |
Description |
Manufacturer |
121 |
2N5445 |
TRIACs 40 Ampere RMS, 400V |
Motorola |
122 |
2N5918 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
123 |
2N5919A |
16W, 400-MHz, Silicon NPN Emitter-Ballasted Overlay Transistor |
RCA Solid State |
124 |
2N5954 |
Silicon P-N-P medium-power transistor. -90V, 40W. |
General Electric Solid State |
125 |
2N5955 |
Silicon P-N-P medium-power transistor. -70V, 40W. |
General Electric Solid State |
126 |
2N5956 |
Silicon P-N-P medium-power transistor. -50V, 40W. |
General Electric Solid State |
127 |
2N6027 |
Silicon programmable unijunction transistor, 40V, 150mA |
Planeta |
128 |
2N6028 |
Silicon programmable unijunction transistor, 40V, 150mA |
Planeta |
129 |
2N6034 |
PNP medium power darlington transistor, 4A , 40V |
SGS Thomson Microelectronics |
130 |
2N6037 |
NPN medium power darlington transistor, 4A , 40V |
SGS Thomson Microelectronics |
131 |
2N6173 |
SCRs 35 Ampere RMS, 400V |
Motorola |
132 |
2N6397 |
Thyristor, 12 amperes, 400 volt |
Teccor Electronics |
133 |
2N6403 |
SCRs 16 Ampere RMS, 400V |
Motorola |
134 |
2N6403 |
Thyristor, 16 amperes, 400 volt |
Teccor Electronics |
135 |
2N6467 |
Silicon P-N-P medium-power transistor. -110V, 40W. |
General Electric Solid State |
136 |
2N6468 |
Silicon P-N-P medium-power transistor. -130V, 40W. |
General Electric Solid State |
137 |
2N6507 |
SCRs 25 Ampere RMS, 400V |
Motorola |
138 |
2N6507 |
Thyristor, 25 amperes, 400 volt |
Teccor Electronics |
139 |
2N6678 |
NPN silicon power transistor. 15 A, 400 V, 175 W. |
Motorola |
140 |
2N6705 |
0.850W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
141 |
2N6707 |
0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
142 |
2N6708 |
0.850W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
143 |
2N6709 |
0.850W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
144 |
2N6710 |
0.850W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
145 |
2N697 |
0.600W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
146 |
2N699 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
147 |
2SC3246 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1.5A Ic, 400 to 3000 hFE. Complementary 2SA1286 |
Isahaya Electronics Corporation |
148 |
2SC3581 |
900mW Lead frame NPN transistor, maximum rating: 50V Vceo, 400mA Ic, 90 to 500 hFE. Complementary 2SA1399 |
Isahaya Electronics Corporation |
149 |
400BT-5 |
BT thermistor, 400KOhm |
SEMITEC |
150 |
400BT-6 |
BT thermistor, 400KOhm |
SEMITEC |
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