| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2N2102 |
1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 92 |
2N2222A |
0.500W General Purpose NPN Metal Can Transistor. 40V Vceo, 0.800A Ic, 40 hFE. |
Continental Device India Limited |
| 93 |
2N2369 |
1.200W General Purpose NPN Metal Can Transistor. 15V Vceo, A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 94 |
2N2369A |
1.200W General Purpose NPN Metal Can Transistor. 15V Vceo, A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 95 |
2N23867 |
1.000W Power PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
| 96 |
2N2904A |
0.600W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 40 hFE. |
Continental Device India Limited |
| 97 |
2N2906A |
0.400W Switching PNP Metal Can Transistor. 60V Vceo, 0.600A Ic, 40 hFE. |
Continental Device India Limited |
| 98 |
2N3250 |
0.360W General Purpose PNP Metal Can Transistor. 40V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
| 99 |
2N3250A |
0.360W General Purpose PNP Metal Can Transistor. 60V Vceo, 0.200A Ic, 40 hFE. |
Continental Device India Limited |
| 100 |
2N3439 |
1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 101 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 102 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 103 |
2N3733 |
10W, 400-Mc Silicon NPN Overlay RF Power Transistor |
RCA Solid State |
| 104 |
2N3867 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
| 105 |
2N3904 |
0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 40 - hFE |
Continental Device India Limited |
| 106 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 107 |
2N4031 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 108 |
2N4234 |
6.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 109 |
2N4235 |
6.000W General Purpose PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 110 |
2N4236 |
6.000W General Purpose PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 111 |
2N4401 |
0.625W Switching NPN Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 40 hFE. |
Continental Device India Limited |
| 112 |
2N4898 |
Medium-power PNP silicon power transistor. 4 A, 40 V, 25 W. |
Motorola |
| 113 |
2N5089 |
0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.050A Ic, 400 - 1200 hFE |
Continental Device India Limited |
| 114 |
2N5321 |
10.000W Switching NPN Metal Can Transistor. 50V Vceo, 2.000A Ic, 40 - 250 hFE. |
Continental Device India Limited |
| 115 |
2N5344 |
High voltage power PNP silicon transistor. 1 A, 250 V, 40 W. |
Motorola |
| 116 |
2N5400 |
0.500W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.600A Ic, 40 - hFE |
Continental Device India Limited |
| 117 |
2N5918 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
| 118 |
2N5919A |
16W, 400-MHz, Silicon NPN Emitter-Ballasted Overlay Transistor |
RCA Solid State |
| 119 |
2N5954 |
Silicon P-N-P medium-power transistor. -90V, 40W. |
General Electric Solid State |
| 120 |
2N5955 |
Silicon P-N-P medium-power transistor. -70V, 40W. |
General Electric Solid State |
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