No. |
Part Name |
Description |
Manufacturer |
61 |
1N758 |
10 V, 400 mW silicon linear diode |
BKC International Electronics |
62 |
1N758A |
10 V, 400 mW silicon linear diode |
BKC International Electronics |
63 |
1N758A-1 |
10 V, 400 mW silicon zener diode |
BKC International Electronics |
64 |
1N759 |
12 V, 400 mW silicon linear diode |
BKC International Electronics |
65 |
1N759A |
12 V, 400 mW silicon linear diode |
BKC International Electronics |
66 |
1N759A-1 |
12 V, 400 mW silicon zener diode |
BKC International Electronics |
67 |
1N821 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
68 |
1N821A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
69 |
1N823 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
70 |
1N823A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
71 |
1N825 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
72 |
1N825A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
73 |
1N827 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
74 |
1N827A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
75 |
1N829 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
76 |
1N829A |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW |
Motorola |
77 |
1N962B-1 |
11 V, 400 mW silicon zener diode |
BKC International Electronics |
78 |
1N963B-1 |
12 V, 400 mW silicon zener diode |
BKC International Electronics |
79 |
1N964B-1 |
13 V, 400 mW silicon zener diode |
BKC International Electronics |
80 |
1N965B-1 |
15 V, 400 mW silicon zener diode |
BKC International Electronics |
81 |
1N966B-1 |
16 V, 400 mW silicon zener diode |
BKC International Electronics |
82 |
1N967B-1 |
18 V, 400 mW silicon zener diode |
BKC International Electronics |
83 |
1N968B-1 |
20 V, 400 mW silicon zener diode |
BKC International Electronics |
84 |
1N969B-1 |
22 V, 400 mW silicon zener diode |
BKC International Electronics |
85 |
1N970B-1 |
24 V, 400 mW silicon zener diode |
BKC International Electronics |
86 |
1N971B-1 |
27 V, 400 mW silicon zener diode |
BKC International Electronics |
87 |
1N972B-1 |
30 V, 400 mW silicon zener diode |
BKC International Electronics |
88 |
1N973B-1 |
33 V, 400 mW silicon zener diode |
BKC International Electronics |
89 |
24LC01B |
The 24LC01B is a 1K bit Electrically Erasable PROM memory organized as a single block of 128 x 8-bit memory with an I2C™ compatible 2-wire serial interface bus. The 24LC01B features hardware write protect, Schmitt trigger inputs, 400 |
Microchip |
90 |
2N1711 |
0.800W General Purpose NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
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