| No. |
Part Name |
Description |
Manufacturer |
| 121 |
5962D0153201TYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 122 |
5962L0153201QYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 123 |
5962L0153201QYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 124 |
5962L0153201QYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 125 |
5962L0153201TYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 126 |
5962L0153201TYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 127 |
5962L0153201TYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 128 |
5962P0153201QYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 129 |
5962P0153201QYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 130 |
5962P0153201QYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 131 |
5962P0153201TYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 132 |
5962P0153201TYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 133 |
5962P0153201TYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 134 |
62C1024L |
128K x 8 LOW POWER CMOS STATIC RAM |
Integrated Silicon Solution Inc |
| 135 |
62LV1024SC |
Very Low Power/Voltage CMOS SRAM 128K X 8 bit |
Brilliance Semiconductor |
| 136 |
63RS881 |
High Performance 1024 x 8 Registered PROM |
Advanced Micro Devices |
| 137 |
63RS881 |
High Performance 1024 x 8 Registered PROM |
Monolithic Memories |
| 138 |
8102402VA |
1024 x 4 CMOS RAM |
Intersil |
| 139 |
8102402VA |
1024 x 4 CMOS RAM |
Intersil |
| 140 |
8102404VA |
1024 x 4 CMOS RAM |
Intersil |
| 141 |
8102404VA |
1024 x 4 CMOS RAM |
Intersil |
| 142 |
8102406VA |
1024 x 4 CMOS RAM |
Intersil |
| 143 |
8102406VA |
1024 x 4 CMOS RAM |
Intersil |
| 144 |
8228 |
4096 bit bipolar ROM (1024x4 ROM) |
Signetics |
| 145 |
82S26 |
1024 BIT bipolar programmable ROM (256 x 4 PROM) |
Signetics |
| 146 |
82S29 |
1024 BIT bipolar programmable ROM (256 x 4 PROM) |
Signetics |
| 147 |
85C82 |
256 to 1024 x 8-bit CMOS EEPROMs with I2C-bus interface |
Philips |
| 148 |
8Q1024K8 |
high-performance 1M byte (8Mbit) CMOS static RAM |
Aeroflex Circuit Technology |
| 149 |
8Q1024K8SRAM |
high-performance 1M byte (8Mbit) CMOS static RAM |
Aeroflex Circuit Technology |
| 150 |
93L415ADC |
-0.5 V to +7 V, 1024 x 1-bit static random access memory |
National Semiconductor |
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