| No. |
Part Name |
Description |
Manufacturer |
| 91 |
5962D0153201TYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 92 |
5962D0153201TYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 93 |
5962D0153201TYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 94 |
5962L0153201QYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 95 |
5962L0153201QYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 96 |
5962L0153201QYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 97 |
5962L0153201TYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 98 |
5962L0153201TYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 99 |
5962L0153201TYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)). |
Aeroflex Circuit Technology |
| 100 |
5962P0153201QYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 101 |
5962P0153201QYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 102 |
5962P0153201QYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 103 |
5962P0153201TYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 104 |
5962P0153201TYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 105 |
5962P0153201TYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)). |
Aeroflex Circuit Technology |
| 106 |
62C1024L |
128K x 8 LOW POWER CMOS STATIC RAM |
Integrated Silicon Solution Inc |
| 107 |
62LV1024SC |
Very Low Power/Voltage CMOS SRAM 128K X 8 bit |
Brilliance Semiconductor |
| 108 |
63RS881 |
High Performance 1024 x 8 Registered PROM |
Advanced Micro Devices |
| 109 |
63RS881 |
High Performance 1024 x 8 Registered PROM |
Monolithic Memories |
| 110 |
8102402VA |
1024 x 4 CMOS RAM |
Intersil |
| 111 |
8102402VA |
1024 x 4 CMOS RAM |
Intersil |
| 112 |
8102404VA |
1024 x 4 CMOS RAM |
Intersil |
| 113 |
8102404VA |
1024 x 4 CMOS RAM |
Intersil |
| 114 |
8102406VA |
1024 x 4 CMOS RAM |
Intersil |
| 115 |
8102406VA |
1024 x 4 CMOS RAM |
Intersil |
| 116 |
85C82 |
256 to 1024 x 8-bit CMOS EEPROMs with I2C-bus interface |
Philips |
| 117 |
8Q1024K8 |
high-performance 1M byte (8Mbit) CMOS static RAM |
Aeroflex Circuit Technology |
| 118 |
8Q1024K8SRAM |
high-performance 1M byte (8Mbit) CMOS static RAM |
Aeroflex Circuit Technology |
| 119 |
93L415ADC |
-0.5 V to +7 V, 1024 x 1-bit static random access memory |
National Semiconductor |
| 120 |
93L415APC |
-0.5 V to +7 V, 1024 x 1-bit static random access memory |
National Semiconductor |
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