| No. |
Part Name |
Description |
Manufacturer |
| 61 |
28F010 |
1024K (128K x 8) CMOS FLASH MEMORY |
Intel |
| 62 |
28F010 |
1024K (128K X 8) CMOS FLASH MEMORY |
Intel |
| 63 |
28F0101024K |
28F010 1024K (128K X 8) CMOS FLASH MEMORY |
Intel |
| 64 |
28F0101024K |
28F010 1024K (128K X 8) CMOS FLASH MEMORY |
Intel |
| 65 |
28F016B3 |
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE, 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY |
Intel |
| 66 |
28F800BV-B |
8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 67 |
28F800BV-T |
8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 68 |
28F800CE-T/B |
8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 69 |
28F800CV-T/B |
8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
Intel |
| 70 |
2N1024 |
Silicon PNP Transistor |
Motorola |
| 71 |
2N1024 |
PNP planar for alloy transistor replacements - silicon |
Sprague |
| 72 |
2SB1024 |
Silicon PNP Power Transistors TO-220Fa package |
Savantic |
| 73 |
2SB1024 |
2SB1024 |
TOSHIBA |
| 74 |
2SB1024 |
2SB1024 |
TOSHIBA |
| 75 |
2SD1024 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
| 76 |
2SD1024 |
Darlington Transistors |
Shindengen |
| 77 |
2SK1024-01 |
N CHANNEL SILICON POWER MOSFET |
Fuji Electric |
| 78 |
307C1024 |
Motor Start Pellet |
Vishay |
| 79 |
41024 |
1W 1GHz Silicon NPN Overlay RF Transistor |
RCA Solid State |
| 80 |
5962-0153201QYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose none. |
Aeroflex Circuit Technology |
| 81 |
5962-0153201QYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none. |
Aeroflex Circuit Technology |
| 82 |
5962-0153201QYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose none. |
Aeroflex Circuit Technology |
| 83 |
5962-0153201TYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hold solder dipped. Total dose none. |
Aeroflex Circuit Technology |
| 84 |
5962-0153201TYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none. |
Aeroflex Circuit Technology |
| 85 |
5962-0153201TYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose none. |
Aeroflex Circuit Technology |
| 86 |
5962-9560801NXD |
1024 x 36 Synchronous FIFO Memory |
Texas Instruments |
| 87 |
5962-9562701NXD |
1024 x 18 Synchronous FIFO Memory |
Texas Instruments |
| 88 |
5962D0153201QYA |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 89 |
5962D0153201QYC |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| 90 |
5962D0153201QYX |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)). |
Aeroflex Circuit Technology |
| | | |
