| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2N5550TF |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 122 |
2N5550TFR |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 123 |
2N5550_D26Z |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 124 |
2N5550_J24Z |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 125 |
2N5551 |
NPN Silicon Transistor (General purpose amplifier High voltage application) |
AUK Corp |
| 126 |
2N5551 |
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR |
Boca Semiconductor Corporation |
| 127 |
2N5551 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 128 |
2N5551 |
0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE |
Continental Device India Limited |
| 129 |
2N5551 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 130 |
2N5551 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
| 131 |
2N5551 |
High Voltage Transistor |
Korea Electronics (KEC) |
| 132 |
2N5551 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 133 |
2N5551 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
| 134 |
2N5551 |
Amplifier Transistors |
Motorola |
| 135 |
2N5551 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 136 |
2N5551 |
NPN General Purpose Amplifier |
National Semiconductor |
| 137 |
2N5551 |
Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 138 |
2N5551 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 139 |
2N5551 |
NPN high-voltage transistors |
Philips |
| 140 |
2N5551 |
NPN Epitaxial Silicon Transistor |
Samsung Electronic |
| 141 |
2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 142 |
2N5551 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 143 |
2N5551 |
Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 144 |
2N5551-T |
Transistor |
Rectron Semiconductor |
| 145 |
2N5551BU |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 146 |
2N5551C |
High Voltage Transistor |
Korea Electronics (KEC) |
| 147 |
2N5551CBU |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 148 |
2N5551CTA |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 149 |
2N5551HR |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| 150 |
2N5551HRG |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
| | | |
