| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N5557 |
Transient Voltage Suppressor |
Microsemi |
| 62 |
1N5557 |
Diode TVS Single Uni-Dir 49.3V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 63 |
1N5558 |
Transient Voltage Suppressor |
Microsemi |
| 64 |
1N5558 |
Diode TVS Single Uni-Dir 175V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 65 |
1N5558A |
Diode TVS Single Uni-Dir 175V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 66 |
1N5559 |
ZENER DIODE |
New Jersey Semiconductor |
| 67 |
1N5559A |
ZENER DIODE |
New Jersey Semiconductor |
| 68 |
1N5559B |
Leaded Zener Diode General Purpose |
Central Semiconductor |
| 69 |
1N5559B |
ZENER DIODE |
New Jersey Semiconductor |
| 70 |
1S1555 |
SWITCHING DIODES |
Leshan Radio Company |
| 71 |
1S1555 |
Silicon epitaxial planar type diode. |
Panasonic |
| 72 |
2N1555 |
Trans GP BJT NPN 40V 0.5A 3-Pin TO-5 |
New Jersey Semiconductor |
| 73 |
2N1555A |
Trans GP BJT NPN 40V 0.5A 3-Pin TO-5 |
New Jersey Semiconductor |
| 74 |
2N2555 |
Trans GP BJT NPN 20V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 75 |
2N5550 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 76 |
2N5550 |
0.500W General Purpose NPN Plastic Leaded Transistor. 140V Vceo, 0.600A Ic, 60 - hFE |
Continental Device India Limited |
| 77 |
2N5550 |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 78 |
2N5550 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
| 79 |
2N5550 |
High Voltage Transistor |
Korea Electronics (KEC) |
| 80 |
2N5550 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 81 |
2N5550 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
| 82 |
2N5550 |
Amplifier Transistors |
Motorola |
| 83 |
2N5550 |
Trans GP BJT NPN 140V 0.6A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 84 |
2N5550 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 85 |
2N5550 |
NPN high-voltage transistors |
Philips |
| 86 |
2N5550 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 87 |
2N5550 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 88 |
2N5550 |
Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 89 |
2N5550-D |
Amplifier Transistors NPN Silicon |
ON Semiconductor |
| 90 |
2N5550BU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
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