| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2N5550RLRA |
Small Signal Amplifier NPN |
ON Semiconductor |
| 92 |
2N5550RLRP |
Small Signal Amplifier NPN |
ON Semiconductor |
| 93 |
2N5550S |
High Voltage Transistor |
Korea Electronics (KEC) |
| 94 |
2N5550TA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 95 |
2N5550TAR |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 96 |
2N5550TF |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 97 |
2N5550TFR |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 98 |
2N5550_D26Z |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 99 |
2N5550_J24Z |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 100 |
2N5551 |
NPN Silicon Transistor (General purpose amplifier High voltage application) |
AUK Corp |
| 101 |
2N5551 |
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR |
Boca Semiconductor Corporation |
| 102 |
2N5551 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 103 |
2N5551 |
0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE |
Continental Device India Limited |
| 104 |
2N5551 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 105 |
2N5551 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
| 106 |
2N5551 |
High Voltage Transistor |
Korea Electronics (KEC) |
| 107 |
2N5551 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 108 |
2N5551 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
| 109 |
2N5551 |
Amplifier Transistors |
Motorola |
| 110 |
2N5551 |
NPN General Purpose Amplifier |
National Semiconductor |
| 111 |
2N5551 |
Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 112 |
2N5551 |
Small Signal Amplifier NPN |
ON Semiconductor |
| 113 |
2N5551 |
NPN high-voltage transistors |
Philips |
| 114 |
2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 115 |
2N5551 |
Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 116 |
2N5551-T |
Transistor |
Rectron Semiconductor |
| 117 |
2N5551BU |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 118 |
2N5551C |
High Voltage Transistor |
Korea Electronics (KEC) |
| 119 |
2N5551CBU |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 120 |
2N5551CTA |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
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